d. Maximum under steady state conditions is 175 °C/W.
t
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
100
60
Maximum
130
75
Unit
°C/W
1
www.din-tek.jp
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 3.6 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 3.6 A, V
GS
= 0 V
- 0.8
13
5
8
5
T
C
= 25 °C
- 1.4
- 20
- 1.2
20
10
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 2.8
I
D
- 3.6 A, V
GEN
= - 8 V, R
g
= 1
V
DD
= - 10 V, R
L
= 2.8
I
D
- 3.6 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
2.2
V
DS
= - 10 V, V
GS
= - 12V, I = - 4.5 A
D
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 4.5 A
23.8
13.8
1.9
3
11
22
21
62
14
9
6
65
15
22
33
32
93
21
18
12
98
23
ns
36
21
nC
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 4 A
V
GS
= - 2.5 V, I
D
= - 4 A
V
GS
= - 1.8 V, I
D
= - 2 A
- 15
0.0465
0.0740
0.1135
0.0650
0.0900
0.1175
- 0.4
- 20
- 14
2.5
-1
± 10
±1
-1
- 10
A
µA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DTS2315
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.050
T
J
= 25
°C
www.din-tek.jp
DTS2315
10-2
10-3
0.040
I
GSS
- Gate Current (mA)
I
GSS
- Gate Current (A)
10-4
10-5
10-6
10-7
10-8
T
J
= 25
°C
T
J
= 150
°C
0.030
0.020
0.010
0.000
0
3
6
9
12
15
10-9
0
4
8
12
16
20
V
GS
- Gate-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
15
V
GS
= 8 V thru 2 V
12
I
D
- Drain Current (A)
I
D
- Drain Current (A)
0.4
0.5
Gate Current vs. Gate-Source Voltage
9
V
GS
= 1.5 V
6
0.3
T
C
= 25
°C
0.2
T
C
= 125
°C
3
V
GS
= 1 V
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
0.1
T
C
= - 55
°C
0
0
0.35
0.7
1.05
1.4
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.1
Transfer Characteristics
2000
0.08
R
DS(on)
- On-Resistance (Ω)
1500
C - Capacitance (pF)
0.06
V
GS
= 1.8 V
V
GS
= 2.5 V
0.04
C
iss
1000
0.02
V
GS
= 4.5 V
500
C
oss
0
0
5
10
I
D
- Drain Current (A)
15
20
0
0
C
rss
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
I
D
= 4.5 A
6
V
DS
= 10 V
R
DS(on)
- On-Resistance (Normalized)
1.5
I
D
= 4 A
www.din-tek.jp
DTS2315
V
GS
= 4.5 V
V
GS
- Gate-to-Source Voltage (V)
1.3
V
GS
= 2.5 V
1.1
4
V
DS
= 5 V
V
DS
= 16 V
2
0.9
0
0
5
10
15
20
25
Q
g
- Total Gate Charge (nC)
0.7
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
30
0.7
On-Resistance vs. Junction Temperature
I
D
= 250 μA
0.6
20
Power (W)
V
GS(th)
(V)
0.5
0.4
10
0.3
0
0.001
0.01
0.1
Time (s)
1
10
100
0.2
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Single Pulse Power, Junction-to-Ambient
100
Threshold Voltage
0.080
I
D
= 4 A
10
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.060
0.040
T
J
= 125
°C
1
T
J
= 25
°C
0.020
T
J
= 25
°C
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain Voltage (V)
0.000
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
4
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
www.din-tek.jp
DTS2315
7
10
I
D
- Drain Current (A)
Limited by R
DS(on)
*
5.6
I
D
- Drain Current (A)
100
100 μs
1
1 ms
10 ms
4.2
0.1
100 ms
10 s,
1 s
DC
2.8
0.01
T
A
= 25
°C
Single Pulse
0.001
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
BVDSS Limited
1.4
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Safe Operating Area, Junction-to-Ambient
2
0.9
Current Derating*
0.7
1.5
0.5
Power (W)
1
Power (W)
0.4
0.5
0.2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Junction-to-Case
Power Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
I saw that there were materials about RF technology and filters on the forum, so of course I had to download them and learn about them. The two books, "RF Filter Technology for Dummies" and "RF Filter...
21-year-old Liu Junjun is a student majoring in advanced nursing at Zhengzhou Railway Vocational and Technical College. She is busy looking for a job recently. On the afternoon of June 4, she got an i...
[table=98%][tr][td]1 Introduction With the rapid development of modern science and technology, wireless communication technology has become one of the issues that people are increasingly concerned abo...
MCP2510 crystal oscillator uses 4M and 16M, uses 16F946 for reading and writing, crystal oscillator is 8M, and the driver is mcp2510.c included in CCS.mcp2510_write(jjj,0x77);cycle=mcp2510_read(jjj);p...
On August 24th, Tesla CEO Elon
Musk
revealed information about the upcoming FSD V14, claiming it will outperform human drivers. Tesla FSD lead Ashok stated last year that FSD version 12.5, ...[Details]
introduction
Bluetooth technology is a short-range wireless communication technology designed to replace wired cables. It is a wireless communication technology standard developed by the SIG, ...[Details]
The structure of an LCD TV primarily consists of the LCD display module, power module, driver module (primarily including the main driver board and tuner board), and keypad module. LCD display modu...[Details]
When discussing autonomous driving technology, there are often two extremes: on the one hand, there's the vision of "fully autonomous driving," while on the other, there's concern about potential s...[Details]
Smartphones have become essential digital devices, and the growing number of smartphone-centric applications is enriching people's lives. As users, they desire a better app experience and a wider r...[Details]
There are basically three causes of spontaneous combustion of electric vehicles: The first is that the battery components are punctured or suffer fatal damage due to a collision accident, and part ...[Details]
One of the most core components of electric vehicles is the motor. The power supply provides electrical energy to the motor, which converts this electrical energy into mechanical energy, which in t...[Details]
1. Ease of Use: The HMI module should be designed to be simple and clear, allowing users to easily operate and configure the energy storage device.
2. Ease of Maintenance: The HMI module should...[Details]
On August 22, according to CNBC's report today, the National Highway Traffic Safety Administration (NHTSA) is launching an investigation into Tesla, and the latter is questioned whether it has fail...[Details]
Coal mines typically contain gas and coal dust. When gas and coal dust reach a certain concentration, they can cause explosions. Electrical equipment generates arcs during normal operation or durin...[Details]
On August 22, the Wall Street Journal reported on the 21st local time that the new US government does not plan to acquire equity in semiconductor wafer foundry giant TSMC and Micron, one of the thr...[Details]
Bosch has released a new SoC series to support L2+ advanced driver assistance functions. The chip integrates high resolution and long-range detection capabilities, and has built-in support for neur...[Details]
Over the past decade, the narrative surrounding fuel vehicles has been one of decline and replacement. Under the onslaught of new energy vehicles, traditional automakers have been forced to acceler...[Details]
China, August 21, 2025 – STMicroelectronics (NYSE: STM), a world-leading semiconductor company serving a wide range of electronics applications, has published its IFRS 2025 semi-annual financial re...[Details]
Plug-in hybrid vehicles (PHEVs) utilize two powertrains. Their pure electric range is typically inferior to that of pure electric vehicles, often reaching less than half that. Currently, mainstream...[Details]
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
