LL4148/LL4448/LL914B
500mW High Speed SMD Switching Diode
Small Signal Diode
Mini-MELF (LL34)
HERMETICALLY SEALED GLASS
Features
Fast switching device(T
rr
<4.0nS)
Surface device type mounting
Moisture sensitivity level 1
Matte Tin (Sn) Terminal Finish
Pb free version and RoHS compliant
All External Surfaces are Corrosion Resistant and
Leads are Readily Solderable
Mechanical Data
Case : Mini-MELF Package (JEDEC DO-213AC)
High temperature soldering guaranteed : 270°C/10s
Polarity : Indicated by cathode band
Weight : approx. 31 mg
Dimensions
A
B
C
D
Unit (mm)
Min
3.30
1.40
0.25
1.25
Unit (inch)
Min
0.130
0.055
0.010
0.049
Max
3.70
1.60
0.40
1.40
Max
0.146
0.063
0.016
0.055
Ordering Information
Package
LL34
LL34
LL34
LL34
LL34
LL34
Part No.
LL4148 L0
LL4448 L0
LL914B L0
LL4148 L1
LL4448 L1
LL914B L1
Packing
10K / 13" Reel
10K / 13" Reel
10K / 13" Reel
2.5K / 7" Reel
2.5K / 7" Reel
2.5K / 7" Reel
Suggested PAD Layout
1.25
0.049
2.00
2.50
0.098
5.00
0.197
0.079
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Reverse Voltage
Peak Forward Surge Current (Note 1) tp=1us
Non-Repetitive Peak Forward Current
Mean Forward Current
Forward Continuous Current
Repetitive peak Forward Current
Thermal Resistance (Junction to Ambient) (Note 2)
Junction and Storage Temperature Range
Symbol
P
D
V
RRM
V
R
I
FSM
I
FM
I
F(AV)
I
F
I
FRM
RθJA
T
J
, T
STG
Value
500
100
75
2
450
150
300
500
300
-65 to + 200
Units
mW
V
V
A
mA
mA
mA
mA
°C/W
°C
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
Version : G12
LL4148/LL4448/LL914B
500mW High Speed SMD Switching Diode
Small Signal Diode
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
LL4448, LL914B
LL4148
LL4448, LL914B
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time (Note 3)
I
F
=5.0mA
I
F
=50.0mA
I
F
=100.0mA
V
R
=20V
V
R
=75V
V
R
=0, f=1.0MHz
I
R
C
J
Trr
V
F
0.62
0.72
1.0
1.0
25
5.0
4.0
4.0
nA
μA
pF
ns
V
I
R
=100uA
I
R
=5uA
Symbol
V
(BR)
Min
100
75
Max
Units
V
Notes:3. Reverse Recovery Test Conditions: I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
Tape & Reel specification
TSC label
Top Cover Tape
Item
Carrier width
Carrier length
Carrier depth
Symbol
A
B
C
d
D
D1
D2
E
F
P0
P1
T
W
W1
Dimension(mm)
1.83 ±0.10
3.73 ±0.10
1.80 ±0.10
1.50 ± 0.10
178 ± 1
55 Min
330 ± 1
100Min
Carieer Tape
Any Additional Label (If Required)
P0
P1
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
E
d
T
A
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.23±0.005
8.00 ±0.30
14.4max
Punch hole position
Sprocke hole pitch
W
F
C
B
Embossment center
Overall tape thickness
Tape width
Reel width
W1
D
D2
D1
Direction of Feed
Version : G12
LL4148/LL4448/LL914B
500mW High Speed SMD Switching Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
FIG 2 Reverse Current vs Reverse Voltage
100
Instantaneous Forward Current (mA)
1500
1200
900
600
300
Ta=25°C
Reverse Current (uA)
10
Ta=25°
1
0.1
0
0.001
0.01
0.01
0.1
1
10
100
1000
0
20
40
60
80
100
120
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
FIG 3 Admissible Power Dissipation Curve
600
Power Dissipation (mW)
500
400
300
200
100
0
0
50
100
150
200
Ambient Temperature (°C)
Reverse Voltage (V)
FIG 5 Forward Resistance vs. Forward Current
Dynamic Forward Resistance (
Ώ
)
10000
1000
100
10
1
0
0
0.1
1
10
100
Forward Current (mA)
Version : G12
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