A Product Line of
Diodes Incorporated
ZTX796A
200V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN E-LINE
Features
BV
CEO
> -200V
I
C
= -0.5A High Continuous Collector Current
I
CM
= -1A Peak Pulse Current
T
J
up to 200°C for High Temperature Operation
h
FE
> 250 @ 0.3A for High Gain Hold-Up
P
D
= 1W Power dissipation
Complementary NPN Type: ZTX696B
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
E-Line
(TO-92 Compatible)
Mechanical Data
Case: E-Line (TO-92 Compatible)
Case Material: molded plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.159 grams (approximate)
Part Mark on
Rounded Face
C
C B E
Ejection Mark
on Flat Face
B
Bottom View
E
Flat Face View
Device Symbol
C B E
C
B
E
Rounded Face View
Pin-Out Configuration
Ordering Information
(Note 4)
Product
ZTX796ASTZ
ZTX796A
Notes:
Marking
ZTX796A
ZTX796A
Package
E-Line
E-Line
Leads
Joggled
Straight
Quantity
2,000 Taped per Ammo Box
4,000 Loose in a Box
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZTX
796A
ZTX796A = Product Type Marking Code
Rounded Face View
ZTX796A
Document Number DS31908 Rev. 3 - 2
1 of 7
www.diodes.com
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX796A
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-200
-200
-5
-0.5
-1
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Dissipation (Note 6)
Thermal Resistance Junction to Ambient (Note 5)
Thermal Resistance Junction to Ambient (Note 6)
Thermal Resistance Junction to Lead (Note 7)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
P
D
R
JA
R
JA
R
JL
T
J,
T
STG
Value
1.5
1
116
175
70
-55 to +200
Unit
W
W
°C/W
°C/W
°C/W
°C
5. For a through-hole device mounted at the seating plane (2.5mm lead length) with the collector lead on 25mm x 25mm 1oz copper
that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on minimum recommended pad layout with 12mm lead length from the bottom of package to the board.
7. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the collector lead).
ZTX796A
Document Number DS31908 Rev. 3 - 2
2 of 7
www.diodes.com
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX796A
Thermal Characteristics and Derating Information
ZTX796A
Document Number DS31908 Rev. 3 - 2
3 of 7
www.diodes.com
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX796A
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
Min
-200
-200
-5
—
—
—
—
—
—
—
—
300
300
250
100
100
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
-0.67
—
—
—
—
—
225
12
100
3200
Max
—
—
—
-0.1
-0.1
-0.1
-0.2
-0.3
-0.3
-0.95
—
800
—
—
—
—
—
—
—
—
Unit
V
V
V
µA
µA
µA
mV
mV
mV
mV
mV
—
—
—
—
MHz
pF
pF
ns
ns
Test Condition
I
C
= -100µA
I
C
= -1mA
I
E
= -100µA
V
CE
= -150V
V
CB
= -150V
V
EB
= -4V
I
C
= -50mA, I
B
= -2mA
I
C
= -100mA, I
B
= -5mA
I
C
= -200mA, I
B
= -20mA
I
C
= -200mA, I
B
= -20mA
I
C
= -200mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -100mA, V
CE
= -10V
I
C
= -300mA, V
CE
= -10V
I
C
= -400mA, V
CE
= -10V
V
CE
= -5V, I
C
= -50mA
f = 50MHz
V
EB
= -0.5V, f = 1MHz
V
CB
= -10V, f = 1MHz
V
CC
= -50V, I
C
= -100mA
I
B1
= -I
B2
= -10mA
Static Forward Current Transfer Ratio (Note 7)
h
FE
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
Note:
f
T
C
ibo
C
obo
t
on
t
off
7. Measured under pulsed conditions. Pulse width
≤
300 µs. Duty cycle
≤
2%
ZTX796A
Document Number DS31908 Rev. 3 - 2
4 of 7
www.diodes.com
May 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX796A
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
ZTX796A
Document Number DS31908 Rev. 3 - 2
5 of 7
www.diodes.com
May 2013
© Diodes Incorporated
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