A Product Line of
Diodes Incorporated
ZXTD09N50DE6
50V DUAL NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26
Features
BV
CEO
> 50V
I
C
= 1A High Continuous Current
High Gain
R
SAT
= 160mΩ for Low Equivalent On Resistance
Low Saturation Voltage V
CE(sat)
< -270mV @ 1A
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads; Solderable per
MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
Applications
LCD Backlighting Inverter Circuits
Boost Functions in DC-DC Converters
SOT26
C1
E1
C2
Top View
Device Symbol
Top View
Pin-Out
B1
E2
B2
Ordering Information
(Notes 4 & 5)
Product
ZXTD09N50DE6TA
ZTD09N50DE6QTA
Notes:
Compliance
AEC-Q101
Automotive
Marking
D619
D619
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
D619
D619 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
Code
C
Month
Code
Jan
1
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
YM
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
May 2015
ZXTD09N50DE6
Document number DS33650 Rev. 6 - 2
1 of 7
www.diodes.com
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTD09N50DE6
Absolute Maximum Ratings – Q1 & Q2 Common
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
50
50
7
1
2
200
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
(Notes 6 & 10)
(Notes 7 & 10)
Power Dissipation
Linear Derating Factor
(Notes 7 & 11)
(Notes 8 & 10)
(Notes 9 & 10)
(Notes 6 & 10)
(Notes 7 & 10)
(Notes 7 & 11)
(Notes 8 & 10)
(Notes 9 & 10)
(Note 12)
P
D
Symbol
Value
0.7
5.6
0.9
7.2
1.1
8.8
1.1
8.8
1.7
13.6
179
139
113
113
73
95.50
-55 to +150
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
R
JA
°C/W
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
JL
T
J
, T
STG
°C
ESD Ratings
(Note 13)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as Note 6, except the device is surface mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is surface mounted on 50mm x 50mm 2oz copper.
9. Same as Note 8, except the device is measured at t < 5 seconds.
10. For device with one active die, both collectors attached to a common heatsink.
11. For device with two active dice running at equal power, split heatsink 50% to each collector.
12. Thermal resistance from junction to solder-point (at the end of the collector lead).
13. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTD09N50DE6
Document number DS33650 Rev. 6 - 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTD09N50DE6
Thermal Characteristics and Derating Information
ZXTD09N50DE6
Document number DS33650 Rev. 6 - 2
3 of 7
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May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTD09N50DE6
Electrical Characteristics - Q1 & Q2 common
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 13)
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
Min
50
50
7
200
300
200
75
20
Typ
420
450
350
130
60
24
60
120
160
940
850
10
215
150
425
Max
10
10
10
Unit
V
V
V
nA
nA
nA
DC Current Gain (Note 13)
h
FE
Collector-Emitter Saturation Voltage (Note 13)
Base-Emitter Saturation Voltage (Note 13)
Base-Emitter Turn-On Voltage (Note 13)
Output Capacitance
Current Gain-Bandwidth Product
Turn-On Time
Turn-Off Time
Note:
V
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
f
T
t
on
t
off
35
80
200
270
1100
1100
mV
mV
mV
pF
MHz
ns
ns
Test Condition
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CB
= 40V
V
CES
= 40V
V
EB
= 5.6V
I
C
= 10mA, V
CE
= 2V
I
C
= 100mA, V
CE
= 2V
I
C
= 500mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 1.5A, V
CE
= 2V
I
C
= 100mA, I
B
= 10mA
I
C
= 250mA, I
B
= 10mA
I
C
= 500mA, I
B
= 10mA
I
C
= 1A, I
B
= 50mA
I
C
= 1A, I
B
= 50mA
I
C
= 1A, V
CE
= 2V
V
CB
= 10V. f = 1MHz
V
CE
= 10V, I
C
= 50mA
f = 100MHz
V
CC
= 10V, I
C
= 1A
I
B1
= I
B2
= 100mA
13. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
ZXTD09N50DE6
Document number DS33650 Rev. 6 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTD09N50DE6
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
ZXTD09N50DE6
Document number DS33650 Rev. 6 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated
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