RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
MD1S
THRU
MD7S
SINGLE-PHASE GLASS PASSIVATED
MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere
FEATURES
*
*
*
*
*
*
*
Surge overload rating - 30 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
Mounting position: Any
Weight: 0.5 gram
MD-S
MECHANICAL DATA
M D
0.028(0.9)
0.020(0.5)
0.108(2.74)
0.092(2.34)
0.193(4.9)
0.177(4.5)
* Epoxy : Device has UL flammability classification 94V-0
* UL listed the recognized component directory, file #E94233
1
2
3
4
.004(0.10) MAX.
2.756(7.0)
0.260(6.6)
0.157(4.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.193(4.9)
0.177(4.5)
0.106(2.7)
0.091(2.3)
0.014(0.35)
0.006(0.15)
Dimensions in millimeters
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Rectified
Current at T
A
= 30
o
C
- on glass-epoxy P.C.B. ( NOTE 1 )
- on aluminum substrate ( NOTE 2 )
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
I
FSM
T
J,
T
STG
30
-55 to + 150
Amps
0
SYMBOL
V
RRM
V
RMS
V
DC
I
O
MD1S
50
35
50
MD2S
100
70
100
MD3S
200
140
200
MD4S
400
280
400
0.5
0.8
MD5S
600
420
600
MD6S
800
560
800
0.157(4.0)
0.145(3.6)
MD7S
1000
700
1000
UNITS
Volts
Volts
Volts
Amp
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 0.5A DC
Maximum Reverse Current at rated
DC Blocking Voltage per element
@T
A
= 25
o
C
@T
A
= 125 C
o
SYMBOL
V
F
MD1S
MD2S
MD3S
MD4S
1.05
10
0.5
MD5S
MD6S
MD7S
UNITS
Volts
uAmps
mAmps
2001-4
I
R
NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05” (1.3 X 1.3mm) pads.
2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25” (20 X 20 X 6.4mm) mounted on 0.05 X 0.05” (1.27 X 1.27mm) solder pad.
3. Suffix “-S” Surface Mount for Mini Dip Bridge.
0.152(3.6)
C
RATING AND CHARACTERISTIC CURVES ( MD1S THRU MD7S )
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
POWER DISSIPATION
2.4
2
pulse test
per one diode
sine wave
Tj=150 C
0
POWER DISSIPATION P
F
(W)
1
2
1.6
0.5
T
L
=150 C
(TYP)
0
T
L
=25 C
(TYP)
0
1.2
0.8
0.2
0.1
0.4
0.05
0
0
0.2
0.4
0.6
0.8
1
1.2
0
0.2
0.4
0.6
0.8
1
INSTANTANEOUS FORWARD VOLTAGE, (V)
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
SURGE FORWARD CURRENT CAPABILITY
35
TYPICAL FORWARD CURRENT
DERATING CURVE
1.4
PEAK FORWARD SURGE CURRENT, (A)
sine wave
AVERAGE FORWARD CURRENT, (A)
30
25
20
15
10
5
0
1
2
5
10
1.2
1.0
0.8
on aluminum
substrate
0
sine wave
R-load
free in air
I
FSM
8.3ms 8.3ms
1 cycle
non-repetitive
0
Tj=25 C
0.6
0.4
0.2
0
on glass
-epoxy substrate
20
50
100
0
40
80
120
160
NUMBER OF CYCLE
AMBIENT TEMPERATURE, (
o
C )
RECTRON
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