ZTE1.5 thru ZTE5.1
Vishay Semiconductors
formerly General Semiconductor
Voltage Stabilizers
DO-204AH (DO-35 Glass)
Features
• Silicon Stabilizer Diodes
• Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits,
providing low dynamic resistance and high-quality
stabilization performance as well as low noise. In the
reverse direction, these devices show the behavior of
forward-biased silicon diodes.
• The end of the ZTE device marked with the cathode ring
is to be connected: ZTE1.5 and ZTE2 to the negative
pole of the supply voltage; ZTE2.4 thru ZTE5.1 to the
positive pole of the supply voltage.
• These diodes are also available in MiniMELF case with
the type designation LL1.5 … LL 5.1.
min. 1.083 (27.5)
max. .150 (3.8)
max.
∅
.079 (2.0)
Cathode
Mark
min. 1.083 (27.5)
Dimensions are in inches
and (millimeters)
Mechanical Data
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Packaging codes/options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape, (52mm tape), 20K/box
max.
∅
.020 (0.52)
Maximum Ratings
Parameter
(T
A
= 25°C unless otherwise noted)
Symbol
Value
Unit
Operating Current (see Table “Characteristics”)
Inverse Current
Power dissipation at T
amb
= 25°C
Junction temperature
Storage temperature range
I
F
P
tot
T
J
T
S
100
300
(1)
150
– 55 to +150
mA
mW
°C
°C
Electrical and Thermal Characteristics
Parameter
Forward Voltage at I
F
= 10 mA
Temperature Coefficient of the
stabilized voltage at I
Z
= 5 mA
ZTE1.5, ZTE2
ZTE2.4, ZTE5.1
(T
A
= 25°C unless otherwise noted)
Symbol
V
F
Min.
–
–
–
–
Typ.
–
–26
–34
–
Max.
1.1
–
–
400
(1)
Unit
V
10
–4
/°C
10
–4
/°C
°C/W
α
VZ
α
VZ
R
θJA
Thermal resistance junction to ambient air
Document Number 88425
02-May-02
www.vishay.com
1
ZTE1.5 thru ZTE5.1
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Type
ZTE1.5
ZTE2
ZTE2.4
ZTE2.7
ZTE3
ZTE3.3
ZTE3.6
ZTE3.9
ZTE4.3
ZTE4.7
ZTE5.1
(T
A
= 25°C unless otherwise noted)
Operating Voltage
at I
Z
= 5mA
(2)
V
Z
(Ω)
1.35 ... 1.55
2.0 ... 2.3
2.2 ... 2.56
2.5 ... 2.9
2.8 ... 3.2
3.1 ... 3.5
3.4 ... 3.8
3.7 ... 4.1
4.0 ... 4.6
4.4 ... 5.0
4.8 ... 5.4
Dynamic resistance
at I
Z
= 5mA
r
zj
(Ω)
13(<20)
18(<30)
14(<20)
15(<20)
15(<20)
16(<20)
16(<25)
17(<25)
17(<25)
18(<25)
18(<25)
Permissable operating current
at T
amb
= 25°C
(1)
I
Z
max. (mA)
120
120
120
105
95
90
80
75
65
60
55
Notes:
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8mm from case
(2) Tested with pulses t
p
= 5ms
www.vishay.com
2
Document Number 88425
02-May-02
Microcontroller MCU
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