VISHAY
ZTE Series
Vishay Semiconductors
Voltage Stabilizers
Features
• Silicon Stabilizer Diodes
• Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits, pro-
viding low dynamic resistance and high-quality
stabilization performance as well as low noise. In
the reverse direction, these devices show the
behavior of forward-biased silicon diodes.
94 9367
• The end of the ZTE device marked with the cath-
ode ring is to be connected: ZTE1.5 and ZTE2 to
the negative pole of the supply voltage; ZTE2.4
thru ZTE5.1 to the positive pole of the supply volt-
age.
Mechanical Data
Case:
DO-35 Glass Case
Weight:
approx. 0.13 g
Packaging codes/options:
TR / 10k per 13 " reel (52 mm tape), 30k/box
TAP / 10k per Ammo tape, (52 mm tape), 30k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Operating Current (see Table
"Characteristics")
Inverse Current
Power dissipation
Junction temperature
Storage temperature range
I
F
P
tot
T
J
T
S
100
300
1)
150
- 55 to + 150
mA
W
°C
°C
Test condition
Symbol
Value
Unit
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Temperature Coefficient of the
stabilized voltage
Test condition
I
Z
= 5 mA
Part
ZTE1.5
ZTE2
ZTE2.4
ZTE5.1
Thermal resistance junction to
ambient air
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case
Symbol
α
VZ
α
VZ
α
VZ
α
VZ
R
θJA
Min
Typ.
- 26
- 26
- 34
- 34
Value
Unit
10
-4
/°C
10
-4
/°C
10
-4
/°C
10
-4
/°C
400
1)
°C/W
Document Number 85813
Rev. 1.4, 27-Nov-03
www.vishay.com
1
ZTE Series
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Test condition
I
F
= 10 mA
Symbol
V
F
Min
Typ.
Max
1.1
VISHAY
Unit
V
Electrical Characteristics
Partnumber
Operating Voltage
(2)
V
Z
@ I
Z
= 5 mA
Ω
ZTE1.5
ZTE2
ZTE2.4
ZTE2.7
ZTE3
ZTE3.3
ZTE3.6
ZTE3.9
ZTE4.3
ZTE4.7
ZTE5.1
(2) Tested with pulses t = 5 ms
Dynamic Resistance
r
zj
@ I
Z
= 5 mA
V
13(<20)
18(<30)
14(<20)
15(<20)
15(<20)
16(<20)
16(<25)
17(<25)
17(<25)
18(<25)
18(<25)
Permissable operating current
(1)
I
z
@ T
amb
= 25 °C
mA
max
120
120
120
105
95
90
80
75
65
60
55
1.35 to 1.55
2.0 to 2.3
2.2 to 2.56
2.5 to 2.9
2.8 to 3.2
3.1 to 3.5
3.4 to 3.8
3.7 to 4.1
4.0 to 4.6
4.4 to 5.0
4.8 to 5.4
(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case
p
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
ZTE
5.1
4.3
3.6
3
18231
18232
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Figure 2. Dynamic resistance vs. operating current, normalized
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2
Document Number 85813
Rev. 1.4, 27-Nov-03
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
ZTE Series
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85813
Rev. 1.4, 27-Nov-03
www.vishay.com
5
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