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SR10A0C

Description
10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size171KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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SR10A0C Overview

10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB

SR1020C THRU SR10A0C
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts
TO-220AB
0.415(10.54)
MAX
0.154(3.91)
DIA
0.148(3.74)
0.185(4.70)
0.175(4.44)
0.057(1.45)
0.051(1.30)
0.113(2.87)
0.103(2.62)
0.145(3.68)
0.135(3.43)
0.410(10.41)
0.390(9.91)
PIN
1
2
3
0.160 (4.05)
0.140 (3.55)
0.635(16.13)
0.625(15.87)
0.350(8.89)
0.330(8.38)
1.148(29.16)
1.118(28.40)
0.590(14.22)
0.530(13.46)
0.037(0.94)
0.027(0.68)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.560(14.2)
0.530(13.4)
Forward Current -10.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C,0.25
(6.35mm) from case for 10 seconds
0.110(2.79)
0.100(2.54)
MECHANICAL DATA
0.022(0.58)
0.014(0.35)
0.105 (2.67)
0.095 (2.41)
PIN 1
PIN 3
PIN 2
CASE
Dimensions in inches and (millimeters)
Case:
TO-220AB molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:0.080
ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
1020C 1030C 1040C 1045C 1050C 1060C 1070C 1080C 1090C 10A0C
SR
SR
SR
SR
SR
SR
SR
SR
SR
SR
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
45
32
45
50
35
50
60
42
60
10.0
70
49
70
80
56
80
90
63
90
100
70
100
I
FSM
V
F
I
R
C
J
R
θ
JC
T
J
T
STG
0.55
15.0
550
150.0
0.75
1.0
50.0
450
2.0
-65 to +125
-65 to +150
-65 to +150
0.85
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to case
MDD ELECTRONIC

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Description 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB
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