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DB3X207K

Description
SILICON, UHF BAND, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size403KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

DB3X207K Overview

SILICON, UHF BAND, MIXER DIODE

DB3X207K Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionR-PDSO-G3
Contacts3
Manufacturer packaging codeMINI3-G3-B
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.4 V
frequency bandULTRA HIGH FREQUENCY
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current3 A
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage20 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DB3X207K
Silicon epitaxial planar type
For high frequency amplification
Features
Low forward voltage V
F
Forward current (Average) I
F(AV)
= 1 A rectification is possible
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: 3F
Packaging
DB3X207K0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
*1
Non-repetitive peak forward surge current
*2
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
Rating
20
20
1
3
125
–55 to +125
Unit
V
V
A
A
°C
°C
1: Anode
2: N.C.
3: Cathode
Panasonic
JEITA
Code
Mini3-G3-B
SC-59A
TO-236AA/SOT-23
3
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
1
2
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*1
Symbol
V
F
I
R
C
t
t
rr
I
F
= 1.0 A
V
R
= 6 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 10 mA, R
L
= 100
43
12
Conditions
Min
Typ
Max
0.4
1.5
Unit
V
mA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz
*1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 10 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: January 2013
Ver. BED
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