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UPD44165084BF5-E50-EQ3

Description
2MX8 QDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, PLASTIC, BGA-165
Categorystorage    storage   
File Size485KB,40 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

UPD44165084BF5-E50-EQ3 Overview

2MX8 QDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, PLASTIC, BGA-165

UPD44165084BF5-E50-EQ3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time0.45 ns
JESD-30 codeR-PBGA-B165
length15 mm
memory density16777216 bit
Memory IC TypeQDR SRAM
memory width8
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX8
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Maximum seat height1.46 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width13 mm
Datasheet
μ
PD44165084B
μ
PD44165094B
μ
PD44165184B
μ
PD44165364B
18M-BIT QDR II SRAM
4-WORD BURST OPERATION
Description
TM
R10DS0018EJ0200
Rev.2.00
October 6, 2011
The
μ
PD44165084B is a 2,097,152-word by 8-bit, the
μ
PD44165094B is a 2,097,152-word by 9-bit, the
μ
PD44165184B is a 1,048,576-word by 18-bit and the
μ
PD44165364B is a 524,288-word by 36-bit synchronous
quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory
cell.
The
μ
PD44165084B,
μ
PD44165094B,
μ
PD44165184B and
μ
PD44165364B integrate unique synchronous
peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are
latched on the positive edge of K and K#. These products are suitable for application which require synchronous
operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-
pin PLASTIC BGA.
Features
1.8 ± 0.1 V power supply
165-pin PLASTIC BGA (13 x 15)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports with concurrent transactions
100% bus utilization DDR READ and WRITE operation
Four-tick burst for reduced address frequency
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 20
μ
s after clock is resumed.
User programmable impedance output (35 to 70
Ω)
Fast clock cycle time : 3.3 ns (300 MHz), 3.5 ns (287 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG 1149.1 compatible test access port
R10DS0018EJ0200 Rev.2.00
October 6, 2011
Page 1 of 39

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