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UPD44325082F5-E50-EQ2

Description
IC,SYNC SRAM,QDR,4MX8,CMOS,BGA,165PIN,PLASTIC
Categorystorage    storage   
File Size385KB,40 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

UPD44325082F5-E50-EQ2 Overview

IC,SYNC SRAM,QDR,4MX8,CMOS,BGA,165PIN,PLASTIC

UPD44325082F5-E50-EQ2 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeBGA
Contacts165
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time0.45 ns
Maximum clock frequency (fCLK)200 MHz
I/O typeSEPARATE
JESD-30 codeR-PBGA-B165
memory density33554432 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of terminals165
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum standby current0.35 A
Minimum standby current1.7 V
Maximum slew rate0.65 mA
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD44325082, 44325092, 44325182, 44325362
36M-BIT QDR
TM
II SRAM
2-WORD BURST OPERATION
Description
The
μ
PD44325082 is a 4,194,304-word by 8-bit, the
μ
PD44325092 is a 4,194,304-word by 9-bit, the
μ
PD44325182 is a
2,097,152-word by 18-bit and the
μ
PD44325362 is a 1,048,576-word by 36-bit synchronous quad data rate static RAM
fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The
μ
PD44325082,
μ
PD44325092,
μ
PD44325182 and
μ
PD44325362 integrate unique synchronous peripheral
circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive
edge of K and K#.
These products are suitable for application which require synchronous operation, high speed, low voltage, high density
and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
Features
1.8 ± 0.1 V power supply
165-pin PLASTIC BGA (13 x 15)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports with concurrent transactions
100% bus utilization DDR READ and WRITE operation
Two-tick burst for low DDR transaction size
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time and clock skew matching-clock
and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed.
User programmable impedance output
Fast clock cycle time : 4.0 ns (250 MHz), 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan
<R>
Operating ambient temperature: Commercial T
A
= 0 to +70°C
Industrial
T
A
= –40 to +85°C
(-E40, -E50)
(-E40Y, -E50Y)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M16783EJ3V0DS00 (3rd edition)
Date Published March 2007 NS CP(N)
Printed in Japan
The mark <R> shows major revised points.
2003
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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