RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-220AB
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Motorola ( NXP ) |
| Reach Compliance Code | unknown |
| Shell connection | EMITTER |
| Maximum collector current (IC) | 2 A |
| Collector-based maximum capacity | 155 pF |
| Collector-emitter maximum voltage | 18 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 30 |
| highest frequency band | VERY HIGH FREQUENCY BAND |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 30 W |
| Minimum power gain (Gp) | 12 dB |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| MRF479 | MRF427 | MRF485 | |
|---|---|---|---|
| Description | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-220AB | Power Bipolar Transistor, 6A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 4 Pin | Power Bipolar Transistor, 1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| Reach Compliance Code | unknown | unknown | unknown |
| Maximum collector current (IC) | 2 A | 6 A | 1 A |
| Collector-based maximum capacity | 155 pF | 60 pF | 100 pF |
| Collector-emitter maximum voltage | 18 V | 65 V | 35 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 30 | 15 | 10 |
| JESD-30 code | R-PSFM-T3 | O-CRFM-F4 | R-PSFM-T3 |
| JESD-609 code | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 4 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | ROUND | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 30 W | 80 W | 30 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | FLAT | THROUGH-HOLE |
| Terminal location | SINGLE | RADIAL | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON |
| Shell connection | EMITTER | - | COLLECTOR |
| JEDEC-95 code | TO-220AB | - | TO-220AB |
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