MRF427 datasheet, PDF - EEWORLD Datasheet

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MRF427: DescriptionPower Bipolar Transistor, 6A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 4 Pin; CategoryDiscrete semiconductor The transistor; File Size200KB，1 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MRF427 Overview

Power Bipolar Transistor, 6A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 4 Pin

MRF427 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	FLANGE MOUNT, O-CRFM-F4
Reach Compliance Code	unknown
Is Samacsys	N
Maximum collector current (IC)	6 A
Collector-based maximum capacity	60 pF
Collector-emitter maximum voltage	65 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JESD-30 code	O-CRFM-F4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	80 W
Maximum power dissipation(Abs)	80 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	RADIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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MRF427 Related Products

	MRF427	MRF479	MRF485
Description	Power Bipolar Transistor, 6A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 4 Pin	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-220AB	Power Bipolar Transistor, 1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
Reach Compliance Code	unknown	unknown	unknown
Maximum collector current (IC)	6 A	2 A	1 A
Collector-based maximum capacity	60 pF	155 pF	100 pF
Collector-emitter maximum voltage	65 V	18 V	35 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	30	10
JESD-30 code	O-CRFM-F4	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	4	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	80 W	30 W	30 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	FLAT	THROUGH-HOLE	THROUGH-HOLE
Terminal location	RADIAL	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Shell connection	-	EMITTER	COLLECTOR
JEDEC-95 code	-	TO-220AB	TO-220AB

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