|
MRAL2023-12 |
MRAL2023-1.5 |
| Description |
RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN |
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, S Band, Silicon, NPN |
| Reach Compliance Code |
unknown |
unknown |
| Other features |
DIFFUSED BALLAST RESISTORS |
DIFFUSED BALLAST RESISTORS |
| Shell connection |
BASE |
BASE |
| Maximum collector current (IC) |
2.5 A |
0.25 A |
| Configuration |
SINGLE |
SINGLE |
| Minimum DC current gain (hFE) |
10 |
10 |
| highest frequency band |
S BAND |
S BAND |
| JESD-30 code |
R-CDFM-F2 |
R-CDFM-F2 |
| Number of components |
1 |
1 |
| Number of terminals |
2 |
2 |
| Maximum operating temperature |
200 °C |
200 °C |
| Package body material |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
| Package shape |
RECTANGULAR |
RECTANGULAR |
| Package form |
FLANGE MOUNT |
FLANGE MOUNT |
| Polarity/channel type |
NPN |
NPN |
| Minimum power gain (Gp) |
6.8 dB |
8 dB |
| Certification status |
Not Qualified |
Not Qualified |
| surface mount |
YES |
YES |
| Terminal form |
FLAT |
FLAT |
| Terminal location |
DUAL |
DUAL |
| transistor applications |
AMPLIFIER |
AMPLIFIER |
| Transistor component materials |
SILICON |
SILICON |