PESD5V0U1BLD
Ultra low capacitance bidirectional ESD protection diode
Rev. 2 — 27 July 2011
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)
plastic package with visible and solderable side pads.
1.2 Features and benefits
Bidirectional ESD protection of one line
Ultra small SMD plastic package
Solderable side pads
Package height typ. 0.37 mm
Ultra low diode capacitance C
d
= 2.9 pF
AEC-Q101 qualified
ESD protection up to 10 kV
IEC 61000-4-2; level 4 (ESD)
Ultra low leakage current: I
RM
= 5 nA
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
High-speed data lines
Communication systems
Portable electronics
1.4 Quick reference data
Table 1.
Symbol
V
RWM
C
d
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
Conditions
Min
-
-
Typ
-
2.9
Max
5
3.5
Unit
V
pF
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode (diode 1)
cathode (diode 2)
[1]
Simplified outline
Graphic symbol
1
2
1
sym045
2
Transparent
top view
[1]
The marking bar indicates pin 1.
NXP Semiconductors
PESD5V0U1BLD
Ultra low capacitance bidirectional ESD protection diode
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0U1BLD
-
Description
leadless ultra small plastic package; 2 terminals;
body 1
0.6
0.4 mm
Version
SOD882D
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
0001 0000
Type number
PESD5V0U1BLD
[1]
For SOD882D binary marking code description, see
Figure 1.
4.1 Binary marking code description
CATHODE BAR
READING DIRECTION
VENDOR CODE
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac477
Fig 1.
SOD882D binary marking code description
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
55
65
Max
150
+150
+150
Unit
C
C
C
PESD5V0U1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 27 July 2011
2 of 11
NXP Semiconductors
PESD5V0U1BLD
Ultra low capacitance bidirectional ESD protection diode
Table 6.
ESD maximum ratings
T
amb
= 25
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic
discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883
(human body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to 2.
[2]
[1][2]
Min
-
-
-
Max
10
400
10
Unit
kV
V
kV
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 2.
8/20
s
pulse waveform according to
IEC 61000-4-5
Fig 3.
ESD pulse waveform according to
IEC 61000-4-2
PESD5V0U1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 27 July 2011
3 of 11
NXP Semiconductors
PESD5V0U1BLD
Ultra low capacitance bidirectional ESD protection diode
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
V
RWM
I
RM
V
BR
C
d
r
dyn
[1]
Conditions
Min
-
-
5.5
-
[1]
Typ
-
5
7
2.9
0.8
Max
5
100
9.5
3.5
-
Unit
V
nA
V
pF
reverse standoff
voltage
reverse leakage current V
RWM
= 5 V
breakdown voltage
diode capacitance
dynamic resistance
I
R
= 5 mA
f = 1 MHz; V
R
= 0 V
I
R
= 10 A
-
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5-1-2008.
3.0
C
d
(pF)
2.6
006aab036
I
PP
−V
CL
−V
BR
−V
RWM
I
R
I
RM
−I
RM
−I
R
V
RWM
V
BR
V
CL
2.2
−
+
1.8
0
1
2
3
4
V
R
(V)
5
−I
PP
006aaa676
f = 1 MHz; T
amb
= 25
C
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
Fig 5.
V-I characteristics for a bidirectional
ESD protection diode
PESD5V0U1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 27 July 2011
4 of 11
NXP Semiconductors
PESD5V0U1BLD
Ultra low capacitance bidirectional ESD protection diode
ESD TESTER
RZ
450
Ω
RG 223/U
50
Ω
coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50
Ω
CZ
IEC 61000-4-2 network
C
Z
= 150 pF; R
Z
= 330
Ω
DUT
(DEVICE
UNDER
TEST)
vertical scale = 10 A/div
horizontal scale = 15 ns/div
vertical scale = 10 V/div
horizontal scale = 100 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 10 A/div
horizontal scale = 15 ns/div
GND
GND
vertical scale = 10 V/div
horizontal scale = 100 ns/div
unclamped
−8
kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped
−8
kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
006aab037
Fig 6.
ESD clamping test setup and waveforms
PESD5V0U1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 27 July 2011
5 of 11
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