®
X02xxxN
SENSITIVE GATE SCR
FEATURES
I
T(RMS)
= 1.4A
V
DRM
= 200V to 800V
Low I
GT
< 200
µA
K
A
G
A
DESCRIPTION
The X02xxxN series of SCRs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose high
volume
applications using surface mount
technology.
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
*
Parameter
RMS on-state current
(180° conduction angle)
Mean on-state current
(180° conduction angle)
Non repetitive surge peak on-state current
(T
j
initial = 25°C )
I
2
t Value for fusing
Critical rate of rise of on-state current
di
G
/dt = 0.1 A/µs.
I
G
= 10 mA
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s
Ttab= 90°C
Ta=75°C
I
T(AV)
*
Ttab= 90°C
Ta=75°C
I
TSM
tp = 8.3 ms
tp = 10 ms
I
2
t
dI/dt
T
stg
T
j
Tl
tp = 10 ms
Value
1.4
1.0
0.9
0.64
25
22.5
2.5
30
- 40, + 150
- 40, + 125
260
Unit
A
A
A
A
A
A
A
2
s
A/µs
°C
°C
SOT223
(Plastic)
* : With 5cm2 copper (e=35µm) surface under tab.
Symbol
V
DRM
V
RRM
Parameter
B
Repetitive peak off-state voltage
T
j
= 125°C R
GK
= 1KΩ
200
Voltage
D
400
M
600
N
800
Unit
V
1/5
May 1998 Ed: 1A
X02xxxN
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-t)
Junction to ambient *
Junction to tab for DC
Parameter
Value
60
25
Unit
°C/W
°C/W
* : With 5cm2 copper (e=35µm) surface under tab.
GATE CHARACTERISTICS
(maximum values)
P
G (AV)
= 0.2 W P
GM
= 3 W (tp = 20
µs)
ELECTRICAL CHARACTERISTICS
Symbol
I
GT
Test Conditions
02
V
D
=12V (DC) R
L
=140Ω
Tj= 25°C
MIN
MAX
V
GT
V
GD
V
RGM
tgd
I
H
I
L
V
TM
I
DRM
I
RRM
dV/dt
tq
V
D
=12V (DC) R
L
=140Ω
V
D
=V
DRM
R
L
=3.3kΩ
R
GK
= 1 KΩ
I
RG
=10µA
V
D
=V
DRM
I
TM
= 3 x I
T(AV
)
dI
G
/dt = 0.1A/µs I
G
= 10mA
I
T
= 50mA R
GK
= 1 KΩ
I
G
=1mA R
GK
= 1 KΩ
I
TM
= 2.8A tp= 380µs
V
D
= V
DRM
R
GK
= 1 KΩ
V
R
= V
RRM
V
D
=67%V
DRM
R
GK
= 1 KΩ
I
TM
= 3 x I
T(AV
) V
R
=35V
dI/dt=10A/µs tp=100µs
dV/dt=2V/µs
V
D
= 67%V
DRM
R
GK
= 1 KΩ
Tj= 25°C
Tj= 125°C
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 110°C
Tj= 110°C
Tj= 110°C
MAX
MIN
MIN
TYP
MAX
MAX
MAX
MAX
MAX
TYP
MAX
15
200
Sensitivity
03
20
200
0.8
0.1
8
0.5
5
6
1.5
5
200
20
100
15
05
20
50
V
V
V
µs
mA
mA
V
µA
µA
V/µs
µs
µA
Unit
I
GM
= 1.2 A (tp = 20
µs)
ORDERING INFORMATION
X
SCR TOP GLASS
CURRENT
02
03
SENSITIVITY
M
N
PACKAGE :
N = SOT223
VOLTAGE
2/5
X02xxxN
Fig.1 :
Maximum average power dissipation ver-
sus average on-state current.
Fig.2 :
Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Ttab).
P (W)
1.4
360
O
P (W)
1.4
Rth(j-t)
Ttab (
o
C)
-85
1.2
DC
1.2
o
1.0
= 180
1.0
Rth(j-a)
-95
0.8
0.6
0.4
0.2
0.0
0.0
0.2
0.4
= 30
o
= 60
o
= 120
= 90
o
o
0.8
-105
0.6
0.4
-115
Tamb ( C)
o
I T(AV)(A)
0.2
1.4
0.6
0.8
1.0
1.2
0.0
0
20
40
60
80
100
120
-125
140
Fig.3 :
Average on-state current versus tab tem-
perature.
I T(AV) (A)
Fig.4 :
Relative variation of thermal impedance
junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a)
1.00
1.6
DC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
50
= 180
o
0.10
Standard foot print , e(Cu)=35
m
Ttab ( C)
60
70
80
90 100 110 120 130
o
tp(s)
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig.5 :
Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
o
Igt[Tj=25 C]
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-40
-20
Ih
Igt
Fig.6 :
Non repetitive surge peak on-state current
versus number of cycles.
ITSM(A)
Ih[Tj]
Ih[Tj=25
o
C]
25
Tj initial = 25 C
o
20
15
10
5
Tj(
o
C)
0
20
40
60
80
100
120
140
Number of cycles
0
1
10
100
1000
3/5
X02xxxN
Fig.7 :
Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp
≤
10ms, and
corresponding value of I
2
t.
I TSM (A). I
2
t (A
2
s)
Fig.8 :
On-state characteristics (maximum values).
I TM (A)
Tj initial = 25
o
C
100
100
Tj initial
o
25 C
I TSM
10
Tj max
10
1
I
2
t
Tj max
Vto =1.05V
Rt =0.150
tp(ms)
VTM (V)
1
1
10
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
4/5
X02xxxN
PACKAGE MECHANICAL DATA
SOT223 (Plastic)
DIMENSIONS
V1
REF.
C
Millimeters
1.50
0.02
2.95
0.65
0.25
6.30
2.3
4.6
3.30
6.70
0.63
0.85
1.10
1.70
0.10
3.15
0.85
0.35
6.70
0.059
0.001
0.090
0.026
0.010
0.248
Inches
0.067
0.004
0.124
0.033
0.014
0.264
0.091
0.181
Min. Typ. Max. Min. Typ. Max.
A
A1
B1
e1
D
B
t
V
A1
V2
O
H E
e
S
A
A1
B
B1
C
D
e
e1
E
H
O
S
t
V
V1
V2
3.70 0.130
0.146
7.30 0.264
0.287
0.65
0.67 0.025 0.026 0.026
1.05 0.033
0.041
1.30 0.043
0.051
10° max
10° min 16°max
10° min 16°max
Weight : 0.11 g
FOOT PRINT
MARKING
Type
X0202BN
X0202DN
X0202MN
X0202NN
X0203BN
X0203DN
X0203MN
X0203NN
X0205BN
X0205DN
X0205MN
X0205NN
Marking
X2B
X2D
X2M
X2N
X3B
X3D
X3M
X3N
X5B
X5D
X5M
X5N
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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