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5.0SMDJ90C

Description
TVS Diode, 5000W, 100.0V, 122.0V, 90.0V, 5uA, 31.3A, 160.0V
CategoryDiscrete semiconductor    Transient suppression diode   
File Size3MB,4 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

5.0SMDJ90C Overview

TVS Diode, 5000W, 100.0V, 122.0V, 90.0V, 5uA, 31.3A, 160.0V

5.0SMDJ90C Parametric

Parameter NameAttribute value
Case StyleSMC
Ppk(W)5000
MIN_(V)100.0
MAX_(V)122.0
Vwm_(V)90.0
Ir_(uA)5
Ippm_(A)31.3
Vc_(V)160.0
classDiodes
Surface Mount
Transient Voltage Suppressors
5.0SMDJ Series
Working Voltage: 11 to 440 V
Peak Pulse Power: 5000 W
Features
SMC/ DO-214AB
Glass passivated chip
5000 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty
cycle):0.01 %
Low leakage
Uni and Bidirectional unit
Excellent clamping capability
Very fast response time
RoHS compliant
Mechanical Data
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Solderable per MIL-STD-750, method
2026
Polarity: Color band denotes cathode end
except Bipolar
Mounting position: Any
Maximum Ratings(T
A
=25
unless otherwise noted)
Value
Symbol
P
PP
5000
I
PP
See Next Table
P
D
6.5
I
FSM
V
F
T
J
, T
STG
300
3.5/5.0
–55 to +150
UNIT
W
A
W
A
V
°C
Parameter
Peak power dissipation with a 10/1000 s waveform
(1)
Peak pulse current wih a 10/1000 s waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C
Peak forward surge current, 8.3 ms single half sine-
wave unidirectional only
(2)
Maximum instantaneous forward voltage at 100 A for
unidirectional only
(3)
Operating junction and storage temperature range
Note:
(1)Non-repetitive current pulse per Fig.5 and derated above T
A
= 25 °C per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
ht
t
p
:
//
Revision:20170301-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
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