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PSMN2R8-80BS_15

Description
N-channel 80 V, 3 mΩ standard level FET in D2PAK
File Size204KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

PSMN2R8-80BS_15 Overview

N-channel 80 V, 3 mΩ standard level FET in D2PAK

D2
PA
K
PSMN2R8-80BS
N-channel 80 V, 3 mΩ standard level FET in D2PAK
Rev. 2 — 29 February 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switch
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 100 °C;
see
Figure 12;
see
Figure 13
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 13
Dynamic characteristics
Q
GD
Q
G(tot)
E
DS(AL)S
gate-drain charge
total gate charge
non-repetitive
drain-source
avalanche energy
V
GS
= 10 V; I
D
= 75 A; V
DS
= 40 V;
see
Figure 14;
see
Figure 15
-
-
-
27
139
-
-
-
676
nC
nC
mJ
Conditions
T
j
25 °C; T
j
175 °C
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-55
-
-
Typ
-
-
-
-
4.21
2.55
Max
80
120
306
175
5
3
Unit
V
A
W
°C
mΩ
mΩ
Static characteristics
Avalanche ruggedness
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 120 A;
V
sup
80 V; R
GS
= 50
Ω;
unclamped
[1]
Continuous current is limited by package.
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