DRD3080V50
Rectifier Diode
DS6075 May 2012 (LN29547)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
RRM
I
F(AV)
I
FSM
5000V
3083A
55000A
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
RRM
V
5000
4800
4600
4400
Conditions
DRD3080V50
DRD3080V48
DRD3080V46
DRD3080V44
V
RSM
= V
RRM
+100V
Lower voltage grades available.
Outline type code: V
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DRD3080V48
for a 4800V device
(See Package Details for further information)
Fig. 1 Package outline
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DRD3080V50
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 75°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
3972
6239
5973
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
2926
4596
4066
A
A
A
T
case
= 100°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
3083
4843
4538
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
2033
3193
2748
A
A
A
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DRD3080V50
-3-
SEMICONDUCTOR
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
Surge (non-repetitive) on-state current
I t for fusing
2
2
Test Conditions
10ms half sine, T
case
= 150°C
V
R
= 50% V
RRM
- ¼ sine
10ms half sine, T
case
= 150°C
V
R
= 0
Max.
44
9.68
55
15.12
Units
kA
MA s
kA
MA s
2
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 43kN
(with mounting compound)
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
Double side
Single side
Min.
-
-
-
-
-
-
-
-55
38.0
Max.
0.0075
0.015
0.015
0.002
0.004
160
150
150
47.0
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
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DRD3080V50
SEMICONDUCTOR
CHARACTERISTICS
Symbol
V
FM
I
RM
Q
S
I
rr
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Total stored charge
Peak reverse recovery current
Threshold voltage
Slope resistance
Test Conditions
At 3000A peak, T
case
= 25°C
At V
DRM,
T
case
= 150°C
I
F
= 2000A, dI
RR
/dt =4A/µs
T
case
= 150°C, V
R
=100V
At T
vj
= 150°C
At T
vj
= 150°C
Min.
-
-
-
-
-
-
Max.
1.25
100
7500
190
0.82
0.143
Units
V
mA
µC
A
V
m
CURVES
11000
Instantaneous Forward Current, I
FM
- (A)
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
25ºC
150ºC
8000
7000
Mean Power Dissipation (W)
6000
5000
4000
dc
3000
2000
1000
0
180sine
120 square
60 square
30 square
0
0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4
Instantaneous Forward Voltage , V
FM
- ( V )
0
1000
2000
3000
4000
5000
6000
Mean on-state Current (A)
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
Where
A = - 0.630059
B = 0.2338835
C = 0.000166
D = - 0.009367
these values are valid for T
j
= 150°C for I
F
1000A to 11000A
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DRD3080V50
-5-
SEMICONDUCTOR
25000
Q
S max
= 4789.7*(di/dt)
0.3197
1400
I
RR max
= 81.792*(di/dt)
0.5963
1200
Reverse recovery current , I
RR
- (A)
20000
Stored Charge, Q
S
- (uC)
1000
15000
Conditions:
I
F
= 2000A
V
R
= 100V
T
j
= 150
o
C
800
600
10000
Conditions:
I
F
= 2000A
V
R
= 100V
T
j
= 150
o
C
400
5000
Q
S min
= 2771.5*(di/dt)
0.3717
200
I
RR min
= 50.733*(di/dt)
0.6536
0
0
50
100
150
Rate of decay of forward current, di
F
/dt - (A/us)
0
0
50
100
150
Rate of decay of forward current, d
IF
/dt - (A/us)
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
Fig.6 Maximum (limit) transient thermal impedance-
junction to case
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