DRD3770A52
Rectifier Diode
DS5988-1 January 2011 (LN28009)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
RRM
I
F(AV)
I
FSM
5200V
3768A
70000A
APPLICATIONS
Rectification
Free-wheel Diode
DC Motor Control
Power Supplies
Welding
Battery Chargers
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
DRM
V
5200
5000
4800
4400
Conditions
DRD3770A52
DRD3770A50
DRD3770A48
DRD3770A44
V
RSM
= V
RRM
+100V
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DRD3770A50
for a 5000V device
Fig. 1 Package outlines
Outline type code: A
(See Package Details for further information)
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DRD3770A52
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 75°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
4914
7715
7150
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
3213
5044
4407
A
A
A
T
case
= 100°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
3768
5916
5414
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
2433
3820
3256
A
A
A
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DRD3770A52
-3-
SEMICONDUCTOR
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
Surge (non-repetitive) on-state current
I t for fusing
2
2
Test Conditions
10ms half sine, T
case
= 150°C
V
R
= 50% V
RRM
- ¼ sine
10ms half sine, T
case
= 150°C
V
R
= 0
Max.
56
15.8
70
24.5
Units
kA
MA s
kA
MA s
2
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 83.0kN
(with mounting compound)
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
Double side
Single side
Min.
-
-
-
-
-
-
-
-55
75.0
Max.
0.0065
0.013
0.013
0.001
0.002
160
150
150
91.0
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
CHARACTERISTICS
Symbol
V
FM
I
RM
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Threshold voltage
Slope resistance
Test Conditions
At 3000A peak, T
case
= 25°C
At V
DRM,
T
case
= 150°C
At T
vj
= 150°C
At T
vj
= 150°C
Min.
-
-
-
-
Max.
1.17
200
0.82
0.111
Units
V
mA
V
m
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DRD3770A52
SEMICONDUCTOR
CURVES
Fig.2 Maximum (limit) forward characteristics
Fig.3 Power loss curves – sine wave
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
A = - 0.0436
B = 0.10422
-5
C = 7.6 x 10
D = 0.00243
these values are valid for T
j
= 150°C for I
F
400A to 9000A
Where
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DRD3770A52
-5-
SEMICONDUCTOR
Fig.4 Power loss curves – square wave
Fig.5 Stored charge
Fig.6 Reverse recovery current
Fig.7 Maximum (limit) transient thermal impedance –
junction to case
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