DRD410T22
Rectifier Diode
DS5997 – 1 March 2011 (LN28183)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
RRM
I
F(AV)
I
FSM
2200V
410A
4900A
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
RRM
V
2200
2000
1800
1600
Conditions
DRD410T22
DRD410T20
DRD410T18
DRD410T16
V
RSM
= V
RRM
+100V
(See Package Details for further information)
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DRD410T22
for a 2200V device
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DRD410T22
CURRENT RATINGS
T
case
= 75°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
490
770
690
A
A
A
T
case
= 100°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
410
640
580
A
A
A
SURGE RATINGS
Symbol
I
FSM
It
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
2
Test Conditions
10ms half sine, T
case
= 175°C
V
R
= 0
Max.
4.9
0.12
Units
kA
MA s
2
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DRD410T22
-3-
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
F
m
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Test Conditions
Double side cooled
Double side cooled
Blocking V
DRM
/
VRRM
DC
DC
Min.
-
-
-40
-40
4
Max.
0.08
0.02
175
175
6
Units
°C/W
°C/W
°C
°C
kN
CHARACTERISTICS
Symbol
V
FM
I
RM
Parameter
Forward voltage
Peak reverse current
Test Conditions
At 800A peak, T
case
= 25°C
At V
DRM,
T
case
= 175°C
I
F
= 1000A, dI
RR
/dt =10A/µs
Min.
-
-
Max.
1.85
30
Units
V
mA
Q
S
Total stored charge
T
case
= 175°C, V
R
=100V
-
1500
µC
V
TO
r
T
Threshold voltage
Slope resistance
At T
vj
= 175°C
At T
vj
= 175°C
-
-
0.82
1.11
V
m
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DRD410T22
CURVES
8000
7000
Instantaneous forward current, I
F
- (A)
Mean power dissipation - (W)
6000
5000
4000
900
800
700
1/2 wave
3 phase
6 phase
T
j
=175°C
600
500
400
300
200
100
0
3000
2000
1000
0
0
2
4
6
8
Instantaneous forward voltage,V
F
- (V)
10
0
100
200
300
400
Mean on-state current, I
T(AV)
- (A)
Fig.3 Dissipation curves
500
Fig.2 Maximum forward characteristics
6.0
Conditons:
T
case
=175°C
V
R
=0
Pulse width = 10ms
0.09
Double side cooled
0.08
Thermal Impedance Zth(j-c) (°C/W)
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
5.0
Surge current, ITSM - (KA)
4.0
3.0
2.0
1.0
0.0
1
10
Number of cycles
100
0.001
0.01
0.1
Time ( s )
1
10
100
Fig.4 Surge (Non-Repetitive) Forward current vs time
Fig.5 Maximum (limit) transient thermal impedance-
junction to case
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DRD410T22
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PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Package outline type code: T
Note:
Some packages may be supplied with gate and or tags.
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