Pin Diode, 1200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| package instruction | HERMETIC SEALED PACKAGE-2 |
| Contacts | 2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW DISTORTION, METALLURGICALLY BONDED |
| application | ATTENUATOR; SWITCHING |
| Minimum breakdown voltage | 1200 V |
| Configuration | SINGLE |
| Maximum diode capacitance | 1 pF |
| Nominal diode capacitance | 0.8 pF |
| Diode component materials | SILICON |
| Maximum diode forward resistance | 1 Ω |
| Diode resistance test current | 50 mA |
| Diode resistance test frequency | 100 MHz |
| Diode type | PIN DIODE |
| JESD-30 code | O-XAMW-F2 |
| JESD-609 code | e0 |
| Minority carrier nominal lifetime | 3.5 µs |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Package body material | UNSPECIFIED |
| Package shape | ROUND |
| Package form | MICROWAVE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Maximum power dissipation | 1.5 W |
| Certification status | Not Qualified |
| Reverse test voltage | 100 V |
| surface mount | YES |
| technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal surface | TIN LEAD |
| Terminal form | FLAT |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
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