DGT304RE
DGT304RE
Reverse Blocking Gate Turn-off Thyristor
Replaces February 2002 version, issue DS5518-2.1
DS5518-3.0 July 2004
FEATURES
I
I
I
I
I
I
I
KEY PARAMETERS
I
TCM
V
DRM
/V
RRM
I
T(AV)
dV
D
/dt
di
T
/dt
700A
1300V
250A
500V/
µ
s
500A/
µ
s
Reverse Blocking Capability
Double Side Cooling
High Reliability In Service
High Voltage Capability
Fault Protection Without Fuses
High Surge Current Capability
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
APPLICATIONS
I
I
I
I
I
I
I
Variable speed A.C. motor drive inverters (VSD-AC)
Uninterruptable Power Supplies
High Voltage Converters
Choppers
Welding
Induction Heating
DC/DC Converters
Outline type code:
E
(See Package Details for further information)
Fig. 1 Package outline
VOLTAGE RATINGS
Type Number
Repetitive Peak Off-state
Voltage
V
DRM
V
1300
Repetitive Peak Reverse Voltage
V
RRM
V
1300
Conditions
DGT304RE13
T
vj
= 125
o
C, I
DM
= 50mA,
I
RRM
= 50mA, V
RG
= 2V
CURRENT RATINGS
Symbol
I
TCM
I
T(AV)
I
T(RMS)
Parameter
Conditions
Max.
700
250
390
Units
A
A
A
Repetitive peak controllable on-state current V
D
= 60%V
DRM
, T
j
= 125
o
C, di
GQ
/dt =15A/µs, Cs = 2.0µF
Mean on-state current
RMS on-state current
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
1/14
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DGT304RE
SURGE RATINGS
Symbol
I
TSM
I
2
t
di
T
/dt
dV
D
/dt
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Critical rate of rise of on-state current
Rate of rise of off-state voltage
Conditions
10ms half sine. T
j
= 125
o
C
10ms half sine. T
j
=125
o
C
V
D
= 60% V
DRM
, I
T
= 700A, T
j
= 125
o
C, I
FG
> 20A,
Rise time < 1.0µs
To 80% V
DRM
; R
GK
≤
1.5Ω, T
j
= 125
o
C
Max.
4.0
80000
500
500
Units
kA
A
2
s
A/µs
V/µs
GATE RATINGS
Symbol
V
RGM
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
Parameter
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
Conditions
This value maybe exceeded during turn-off
Min.
-
-
-
-
10
20
40
Max.
16
50
10
6
50
-
-
Units
V
A
W
kW
A/µs
µs
µs
THERMAL RATINGS
Symbol
Parameter
Conditions
Double side cooled
R
th(j-hs)
DC thermal resistance - junction to heatsink
surface
Anode side cooled
Cathode side cooled
R
th(c-hs)
T
vj
T
OP
/T
stg
-
Contact thermal resistance
Virtual junction temperature
Operating junction/storage temperature range
Clamping force
Clamping force 5.5kN
With mounting compound
per contact
Min.
-
-
-
-
-
-40
5.0
Max.
0.075
0.12
0.20
0.018
125
125
6.0
Units
o
C/W
C/W
C/W
C/W
o
o
o
o
C
C
o
kN
2/14
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DGT304RE
CHARACTERISTICS
T
j
= 125
o
C unless stated otherwise
Symbol
V
TM
I
DM
I
RRM
V
GT
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
tail
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
On-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
Turn-off energy
Tail time
I
T
=600A, V
DM
= 750V
Storage time
Snubber Cap Cs = 1.5µF,
Fall time
di
GQ
/dt = 15A/µs
Gate controlled turn-off time
R
L
= (Residual inductance 3µH)
Turn-off gate charge
Total turn-off gate charge
-
-
700
1400
-
11.9
µs
µC
µC
-
0.9
µs
-
11
Parameter
Conditions
At 600A peak, I
G(ON)
= 2A d.c.
At = V
DRM
, V
RG
= 2V
At V
RRM
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
V
RGM
= 16V, No gate/cathode resistor
V
D
= 900V, I
T
= 600A, dI
T
/dt = 300A/µs
I
FG
= 20A, rise time < 1.0µs
R
L
= (Residual inductance 3µH)
Min.
-
-
-
-
-
-
-
-
-
-
-
Max.
2.2
25
50
0.9
1.0
50
130
1.5
3.0
350
10
Units
V
mA
mA
V
A
mA
mJ
µs
µs
mJ
µs
µs
3/14
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DGT304RE
CURVES
Fig.2 Gate characteristics
Fig.3 Maximum (limit) on-state characteristics
Fig.4 Dependence of I
TCM
on C
S
Fig.5 Maximum (limit) transient thermal resistance
4/14
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DGT304RE
Fig.6 Surge (non-repetitive) on-state current vs time
Fig.7 Steady state rectangulerwave conduction loss - double side cooled
5/14
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