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BY251G

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size36KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BY251G Overview

Rectifier Diode

BY251G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
Reverse test voltage200 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

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Description Rectifier Diode Rectifier Diode, Rectifier Diode
Reach Compliance Code compliant compliant compliant
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