PTFB193404F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
340 W, 30 V, 1930 – 1990 MHz
Description
The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-
standard cellular power amplifier applications in the 1930 to 1990 MHz
frequency band. Features include input and output matching, high gain
and thermally-enhanced package with earless flange. Manufactured
with Infineon’s advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PTFB193404F
Package H-37275-6/2
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-20
-25
40
Features
•
•
•
Broadband internal matching
Wide video bandwidth
Typical single-carrier WCDMA performance,
1990 MHz, 30 V
- Output power = 125 W
- Efficiency = 31%
- Gain = 17 dB
- PAR = 5.5 dB @ 0.01% CCDF
- ACPR @ 5 MHz = –35 dBc
Increased negative gate-source voltage range
for improved performance in Doherty amplifiers
Capable of handling 10:1 VSWR @ 30 V, 340 W
(CW) output power
Integrated ESD protection
Excellent thermal stability
Pb-free and RoHS compliant
Efficiency
35
30
25
IMD, ACPR (dBc)
-30
-35
-40
-45
-50
-55
-60
36
38
40
42
44
46
48
50
52
IMD Low
ACPR
IMD Up
20
15
10
5
0
Drain Efficiency (%)
•
•
•
•
•
Average Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 2.6 A, P
OUT
= 80 W average, ƒ = 1990 MHz, 5 MHz spacing, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
17.5
28.5
—
Typ
19
30
–31
Max
—
—
–29
Unit
dB
%
dBc
η
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
– DRAFT ONLY
1 of 13
Rev. 04, 2011-02-07
PTFB193404F
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-carrier WCDMA Characteristics
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 2.6 A, P
OUT
= 80 W average, ƒ
1
= 1980 MHz, ƒ
2
= 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
18
29
–33
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
Two-tone Characteristics
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 2.6 A, P
OUT
= 265 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
19
36
30
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.05
2.8
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 2.6 A
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
Symbol
V
DSS
V
GS
T
J
T
STG
R
θJC
Value
65
–6 to +10
200
–40 to +150
0.2
Unit
V
V
°C
°C
°C/W
Data Sheet
– DRAFT ONLY
2 of 13 one
Rev. 04, 2011-02-07
PTFB193404F
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
PTFB193404F V1
PTFB193404F V1 R250
Package Outline
H-37275-6/2
H-37275-6/2
Package Description
Ceramic open-cavity, earless push-pull
Ceramic open-cavity, earless push-pull
Shipping
Tray
Tape & reel, 250 pcs
Typical Performance
(data taken in production test fixture)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 2.6 A,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-25
-30
-35
20
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
40
35
Gain
IMD (dBc)
-40
-45
-50
-55
-60
36
38
40
42
44
46
48
1990
1960
1930
s uuu
50
52
Gain (dB)
25
18
20
Efficiency
17
15
10
5
16
36
38
40
42
44
46
48
50
52
0
Average Output Power (dBm)
Average Output Power (dBm)
Data Sheet
– DRAFT ONLY
3 of 13 two
Rev. 04, 2011-02-07
Efficiency (%)
IM3 Low
IM3 Up
19
30
PTFB193404F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Two-tone Broadband Performance
V
DD
= 30 V, I
DQ
= 2.6 A, P
OUT
= 52 dBm
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 2.6 A,,
ƒ
1
= 1989 MHz, ƒ
2
= 1990 MHz
60
0
45
50
40
Return Loss
-10
-20
Return Loss (dB) / IMD (dBc)
Gain (dB) / Efficiency (%)
-25
40
35
Efficiency
30
20
10
1840
3rd Order IMD
-45
25
20
15
IMD3
-30
-40
-55
Efficiency
10
5
Gain
1900
1960
2020
-50
2080
-65
39
44
49
54
0
Frequency (MHz)
Output Power, PEP. (dBm)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 2.6 A,
ƒ
1
= 1989 MHz, ƒ
2
= 1990 MHz
20
19
42
21
20
Two-tone Drive-up (over temperature)
(P
OUT
-max 3rd order IMD @ –30 dBc)
V
DD
= 30 V, I
DQ
= 2.6 A,
ƒ
1
= 1959 MHz, ƒ
2
= 1960 MHz
50
Gain
35
Gain
40
30
20
Efficiency (%)
Gain (dB)
21
17
16
15
40
44
48
52
56
Efficiency
14
7
0
Gain (dB)
18
19
18
Efficiency
17
16
39
41
43
45
47
49
51
+25C
+85C
–30C
53
55
57
10
0
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Data Sheet
– DRAFT ONLY
4 of 13 one
Rev. 04, 2011-02-07
Efficiency (%)
28
Efficiency (%)
IMD (dBc)
-35
30
PTFB193404F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Two-tone Drive-up
at Selected Frequencies
V
DD
= 30 V, I
DQ
= 2.6 A, tone spacing = 1 MHz
-20
-30
-40
-50
-60
-70
39
41
43
45
47
49
51
53
55
57
-15
-25
-35
Intermodulation Distortion
vs. Output Power
V
DD
= 30 V, I
DQ
= 2.6 A,
ƒ
1
= 1989 MHz, ƒ
2
= 1990 MHz
3rd Order
5th
IMD 3rd Order (dBc)
IMD (dBc)
-45
7th
-55
-65
-75
39
41
43
45
47
49
51
53
55
57
1990 MHz
1960 MHz
1930 MHz
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Intermodulation Distortion
vs. Tone Spacing
V
DD
= 30 V, I
DQ
= 2.6 A,
ƒ = 1930 MHz, P
OUT
= 317 W (PEP)
Adjacent Channel Power Ratio (dB)
-10
-20
-20
Single-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH,
43% clipping, PAR = 7.5 dB, 3.84 MHz BW
40
Efficiency
-30
35
30
25
IMD3
-30
-40
-50
-60
-70
1
IMD5
IMD7
IMD Lower
IMD Upper
10
100
-40
20
ACPR Up
-50
15
ACPR Low
10
5
0
52
-60
36
38
40
42
44
46
48
50
Two Tone Spacing (MHz)
Average Output Power (dBm)
Data Sheet
– DRAFT ONLY
5 of 13 two
Rev. 04, 2011-02-07
Drain Efficiency (%)
IMD (dBc)
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