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PTFB193404FV1

Description
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37275-6/2, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size238KB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
Download Datasheet Parametric Compare View All

PTFB193404FV1 Overview

RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37275-6/2, 6 PIN

PTFB193404FV1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionFLATPACK, R-CDFP-F6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandL BAND
JESD-30 codeR-CDFP-F6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
PTFB193404F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
340 W, 30 V, 1930 – 1990 MHz
Description
The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-
standard cellular power amplifier applications in the 1930 to 1990 MHz
frequency band. Features include input and output matching, high gain
and thermally-enhanced package with earless flange. Manufactured
with Infineon’s advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PTFB193404F
Package H-37275-6/2
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-20
-25
40
Features
Broadband internal matching
Wide video bandwidth
Typical single-carrier WCDMA performance,
1990 MHz, 30 V
- Output power = 125 W
- Efficiency = 31%
- Gain = 17 dB
- PAR = 5.5 dB @ 0.01% CCDF
- ACPR @ 5 MHz = –35 dBc
Increased negative gate-source voltage range
for improved performance in Doherty amplifiers
Capable of handling 10:1 VSWR @ 30 V, 340 W
(CW) output power
Integrated ESD protection
Excellent thermal stability
Pb-free and RoHS compliant
Efficiency
35
30
25
IMD, ACPR (dBc)
-30
-35
-40
-45
-50
-55
-60
36
38
40
42
44
46
48
50
52
IMD Low
ACPR
IMD Up
20
15
10
5
0
Drain Efficiency (%)
Average Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 2.6 A, P
OUT
= 80 W average, ƒ = 1990 MHz, 5 MHz spacing, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
17.5
28.5
Typ
19
30
–31
Max
–29
Unit
dB
%
dBc
η
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
– DRAFT ONLY
1 of 13
Rev. 04, 2011-02-07

PTFB193404FV1 Related Products

PTFB193404FV1 PTFB193404FV1R250
Description RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37275-6/2, 6 PIN RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-37275-6/2, 6 PIN
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction FLATPACK, R-CDFP-F6 GREEN, CERAMIC, H-37275-6/2, 6 PIN
Contacts 6 6
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY
Shell connection SOURCE SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage 65 V 65 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band L BAND L BAND
JESD-30 code R-CDFP-F6 R-CDFP-F6
Number of components 2 2
Number of terminals 6 6
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form FLATPACK FLATPACK
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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