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XF1000-DB-0G00

Description
Wide Band Medium Power Amplifier, 0MHz Min, 5000MHz Max, 6 X 3 MM, ROHS COMPLIANT, DFN-14
CategoryWireless rf/communication    Radio frequency and microwave   
File Size2MB,9 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
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XF1000-DB-0G00 Overview

Wide Band Medium Power Amplifier, 0MHz Min, 5000MHz Max, 6 X 3 MM, ROHS COMPLIANT, DFN-14

XF1000-DB-0G00 Parametric

Parameter NameAttribute value
MakerMACOM
Reach Compliance Codecompliant
Characteristic impedance50 Ω
structureCOMPONENT
Gain12.5 dB
Maximum input power (CW)25 dBm
JESD-609 codee3
Maximum operating frequency5000 MHz
Minimum operating frequency
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
Terminal surfaceMATTE TIN
DC-5.0 GHz
34.0 dBm Packaged HFET
May 2010 - Rev 25-May-10
F1000-DB
Features
High Linearity, 47 dBm OIP3
High Gain, 10 dB Gain @ 4.9 GHz
34 dBm P1dB
Low Thermal Resistance
Surface Mount 3x6mm DFN
General Description
The XF1000-BD is a high linearity Hetrojunction Field Effect
Transistor (HFET) housed in a 3x6mm DFN package.
Optimum performance is achieved when the device is
biased at a drain voltage of 8V and drain current of 600 mA.
At this bias point and at 4.9 GHz the device is capable of
more than 34 dBm of P1dB and OIP3 of more than 46 dBm.
The XF1000-DB is suitable for applications up to 5 GHz
where it has 10 dB of gain.
Absolute Maximum Ratings
Device Voltage (Vdd)
Current (Idd)
Power Dissipation (PDC)
RF Input Power (RFin)
Junction Temperature
Thermal Resistance
Storage Temperature (Tstg)
Operating Temperature
ESD (HBM)
Moisture Sensitivity Level (MSL)
+9.0 V
750 mA
6.0W
+25 dBm
175 ºC
18 ºC/W
-55 ºC to +150 ºC
-40 ºC to +85 ºC
Class 1A
MSL 3
Typical Performance: 8V, 25 ºC
Parameter
Typical
Units
MHz
dB
dBm
dBm
mA
dB
dB
Frequency (F)
3600
Gain (S21)
10.5
Ourput IP3 (OIP3)
47.0
Output P1dB
34.0
Quiescent Current (Idq)
600
Input Return Loss (S11)
-6.3
Output Return Loss (S22) -12.6
4900
10.0
46.0
33.7
600
-8.0
-11.5
Operation of this device beyond any of these parameters may cause
permanent damage.
Electrical Characteristics (T=25ºC,Vdd=8V)
Parameter
Condition
Frequency Range (F)
Test Frequency
Small Signal Gain (S21)
Externally matched
Output Intercept Point (OIP3) Pout/Tone=22 dBm, Spacing=5 MHz
Output P1dB
Quiescent Current (Icq)
Noise Figure (NF)
Unless otherwise specified, the following specifications are guaranteed at room temperature in a Mimix test fixture.
Units Min
Typ
Max
MHz DC
5000
MHz
2000
12.5 14.5
dB
dBm +44.0 +46.5
dBm +33.0 +34.0
mA
600.0 700.0
dB
5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 9
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

XF1000-DB-0G00 Related Products

XF1000-DB-0G00 XF1000-DB-0G0T
Description Wide Band Medium Power Amplifier, 0MHz Min, 5000MHz Max, 6 X 3 MM, ROHS COMPLIANT, DFN-14 Wide Band Medium Power Amplifier, 0MHz Min, 5000MHz Max, 6 X 3 MM, ROHS COMPLIANT, DFN-14
Maker MACOM MACOM
Reach Compliance Code compliant compliant
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Gain 12.5 dB 12.5 dB
Maximum input power (CW) 25 dBm 25 dBm
JESD-609 code e3 e3
Maximum operating frequency 5000 MHz 5000 MHz
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
RF/Microwave Device Types WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER
Terminal surface MATTE TIN MATTE TIN

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