HiPerFET
Power MOSFETs
TM
V
DSS
IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
I
D25
R
DS(on)
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Obsolete:
IXFM21N50
IXFM24N50
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
500 V 21 A 0.25
Ω
500 V 24 A 0.23
Ω
500 V 26 A 0.20
Ω
t
rr
≤
250 ns
Maximum Ratings
500
500
±20
±30
21N50
24N50
26N50
21N50
24N50
26N50
21N50
24N50
.
26N50
21
24
26
84
96
104
21
24
26
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) Case Style
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
G
S
TO-204 AE (IXFM)
(TAB)
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Package not
available
D
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10
TO-204 = 18 g, TO-247 = 6 g
Features
• International standard packages
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface mountable package
• High power density
91525H (9/99)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
500
2
4
±100
T
J
= 25°C
T
J
= 125°C
200
1
V
V
nA
µA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
© 1999 IXYS All rights reserved
IXFH21N50
IXFM21N50
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
R
DS(on)
21N50
24N50
26N50
Pulse test, t
≤
300
µs,
duty cycle
d
≤
2 %
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
11
21
4200
450
135
16
33
65
30
135
28
62
0.25
25
45
80
40
160
40
85
V
GS
= 10 V, I
D
= 0.5 I
D25
Characteristic Values
Min. Typ.
Max.
0.25
0.23
0.20
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
IXFH24N50
IXFM24N50
IXFT24N50
IXFH26N50
IXFM26N50
IXFT26N50
TO-247 AD (IXFH) Outline
1
2
3
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
∅P
Q
R
S
Millimeter
Min.
Max.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
3.55
5.89
4.32
6.15
5.3
2.54
2.6
1.4
2.13
3.12
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
BSC
Inches
Min.
Max.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205
.780
.140
0.232
.170
242
.209
.102
.098
.055
.084
.123
.031
.845
.640
0.225
.800
.177
.144
0.252
.216
BSC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
Ω
(External)
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
(TO-247 Case Style)
0.42 K/W
K/W
Source-Drain Diode
Symbol
I
S
Test Conditions
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min.
Typ. Max.
21N50
24N50
26N50
21N50
24N50
26N50
.
TO-204 AE (IXFM) Outline
21
24
26
84
96
104
1.5
250
400
A
A
A
A
A
A
V
ns
ns
µC
µC
A
A
Pins: 1 - Gate, 2 - Source, Case - Drain
Dim.
A
A1
∅b
∅D
e
e1
L
∅p
∅p1
q
R
R1
s
10.67
5.21
11.18
3.84
3.84
12.58
3.33
16.64
Millimeter
Min.
Max.
6.4
1.53
1.45
11.4
3.42
1.60
22.22
11.17
5.71
12.19
4.19
4.19
13.33
4.77
17.14
.420
.205
.440
.151
.151
.495
.131
.655
Inches
Min.
Max.
.250
.060
.057
.450
.135
.063
.875
.440
.225
.480
.165
.165
.525
.188
.675
I
SM
V
SD
t
rr
Q
RM
I
RM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle
d
≤
2 %
I
F
= I
S
-di/dt = 100 A/µs,
V
R
= 100 V
T
J
=
T
J
=
T
J
=
T
J
=
T
J
=
T
J
=
25°C
125°C
25°C
125°C
25°C
125°C
1
2
10
15
Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S)
TO-268 Outline
30.15 BSC
1.187 BSC
Min. Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFH21N50
IXFM21N50
IXFH24N50
IXFM24N50
IXFT24N50
Fig. 2 Input Admittance
IXFH26N50
IXFM26N50
IXFT26N50
Fig. 1 Output Characteristics
50
45
40
35
30
25
20
15
10
5
0
5V
V
GS
= 10V
T
J
= 25°C
50
6V
7V
45
40
35
30
25
20
15
10
5
0
T
J
= 25°C
V
DS
= 10V
I
D
- Amperes
0
5
10
15
20
25
30
35
I
D
- Amperes
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
V
GS
- Volts
Fig. 3 R
DS(on)
vs. Drain Current
1.6
1.5
T
J
= 25°C
2.50
2.25
Fig. 4 Temperature Dependence
of Drain to Source Resistance
R
DS(on)
- Normalized
1.4
1.3
1.2
1.1
1.0
0.9
0
5
10 15 20 25 30 35 40 45 50
V
GS
= 10V
V
GS
= 15V
.
R
DS(on)
- Normalized
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-50
-25
0
25
50
75
100 125 150
I
D
= 12A
I
D
- Amperes
T
J
- Degrees C
30
25
Fig. 5 Drain Current vs.
Case Temperature
26N50
24N50
21N50
1.2
1.1
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
V
GS(th)
BV
DSS
BV/V
G(th)
- Normalized
0
25
50
75
100 125 150
I
D
- Amperes
20
15
10
5
0
-50
1.0
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100 125 150
-25
T
C
- Degrees C
T
J
- Degrees C
© 1999 IXYS All rights reserved
IXFH21N50
IXFM21N50
IXFH24N50
IXFM24N50
IXFT24N50
IXFH26N50
IXFM26N50
IXFT26N50
Fig.7
10
9
8
7
Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
V
DS
= 250V
I
G
= 10mA
I
D
= 12.5A
100
Limited by R
DS(on)
10µs
100µs
I
D
- Amperes
V
GE
- Volts
6
5
4
3
2
1
0
0
25
50
75
100 125 150 175 200
10
1ms
10ms
1
100ms
0.1
1
10
100
500
Gate Charge - nCoulombs
V
DS
- Volts
Fig.9
Capacitance Curves
Fig.10 Source Current vs. Source to Drain Voltage
50
C
iss
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
45
40
35
30
25
20
15
10
5
0
0.00
T
J
= 125°C
T
J
= 25°C
Capacitance - pF
f = 1 Mhz
V
DS
= 25V
.
C
oss
C
rss
25
I
D
- Amperes
0.25
0.50
0.75
1.00
1.25
1.50
V
DS
- Volts
V
SD
- Volt
Fig.11 Transient Thermal Impedance
1
Thermal Response - K/W
0.1
D=0.5
D=0.2
D=0.1
D=0.05
0.01
D=0.02
D=0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
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