TELEFUNKEN Semiconductors
TLS.210.
Symbol LED in 2 x 5 mm Flat Tinted Top Diffused Package
Color
Red
Yellow
Green
TLSH210.
TLSY210.
TLSG210.
Type
Technology
GaAsP on GaP
GaAsP on GaP
GaP on GaP
Angle of Half Intensity
±
ö
50
°
Description
This series was developed for use as compact surface dis-
play. It is housed in a 2x5 mm rectangular molded
package. This device has a flat tinted, top diffused pack-
age for uniform brightness when used in panels.
The symbol LEDs are available in three bright colors:
high efficiency red, yellow and green.
Features
D
D
D
D
D
D
D
D
Choice of three bright colors
Uniform illumination
Luminous intensity selected into groups
Suitable for DC and pulse operation
Flat light emitting surface
Direct symbol indication is possible
Yellow and green color categorized
Wide viewing angle
96 11498
Applications
Status lights
Background illumination
Maintenance lights
Indicator of audio and visual equipment
Off / On indicator
Readout lights
Legend lights
Illumination of moving boards
Rev. A1: 01.06.1995
1 (8)
TLS.210.
Absolute Maximum Ratings
T
amb
= 25°C, unless otherwise specified
TLSH210.
,TLSY210. ,TLSG210.
Parameter
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Test Conditions
Type
TELEFUNKEN Semiconductors
t
p
≤
10
m
s
T
amb
≤
65
°
C
t
≤
5 s,
2 mm from body
Symbol
V
R
I
F
I
FSM
P
V
T
j
T
stg
T
sd
R
thJA
Value
6
30
1
100
100
–55 to +100
260
350
Unit
V
mA
A
mW
°
C
°
C
°
C
K/W
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Red
(TLSH210. )
Parameter
Luminous intensity
y
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Yellow
(TLSY210. )
Parameter
Luminous intensity
y
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Test Conditions
I
F
= 10 mA, I
Vmin
/I
Vmax
≥
0.5
,
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 20 mA
I
R
= 10
m
A
V
R
= 0, f = 1 MHz
Type
TLSY2100
TLSY2101
Symbol
I
V
I
V
l
d
l
p
ϕ
V
F
V
R
C
j
Min
0.63
1
581
Typ
2
2
585
±50
2.4
15
50
Max
Unit
mcd
mcd
nm
nm
deg
V
V
pF
Test Conditions
I
F
= 10 mA, I
Vmin
/I
Vmax
≥
0.5
,
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 20 mA
I
R
= 10
m
A
V
R
= 0, f = 1 MHz
Type
TLSH2100
TLSH2101
Symbol
I
V
I
V
l
d
l
p
ϕ
V
F
V
R
C
j
Min
0.63
1
Typ
2
2.5
640
650
±50
2
15
50
Max
Unit
mcd
mcd
nm
nm
deg
V
V
pF
3
6
594
3
6
2 (8)
Rev. A1: 01.06.1995
TELEFUNKEN Semiconductors
Green
(TLSG210. )
Parameter
Luminous intensity
y
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Test Conditions
I
F
= 10 mA, I
Vmin
/I
Vmax
≥
0.5
,
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 20 mA
I
R
= 10
m
A
V
R
= 0, f = 1 MHz
Type
TLSG2100
TLSG2101
Symbol
I
V
I
V
l
d
l
p
ϕ
V
F
V
R
C
j
Min
1
1.6
562
TLS.210.
Typ
2
2.5
565
±50
2.4
15
50
Max
Unit
mcd
mcd
nm
nm
deg
V
V
pF
575
3
6
Typical Characteristics
(T
amb
= 25
_
C, unless otherwise specified)
125
P
V
– Power Dissipation ( mW )
10000
I
F
– Forward Current ( mA )
100
1000
t
p
/T=0.01
0.02
0.05
75
50
25
0
0
20
40
60
80
100
0.1
100 0.2
0.5
1
10
T
amb
1
0.01
0.1
1
v
65°C
10
100
95 10918
T
amb
– Ambient Temperature (
°C
)
95 10079
t
p
– Pulse Length ( ms )
Figure 1. Power Dissipation vs. Ambient Temperature
60
I
F
– Forward Current ( mA )
50
40
30
20
10
0
0
95 10046
Figure 3. Forward Current vs. Pulse Length
0°
I
v rel
– Relative Luminous Intensity
10
°
20
°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
20
40
60
80
100
95 10082
T
amb
– Ambient Temperature (
°C
)
Figure 2. Forward Current vs. Ambient Temperature
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
Rev. A1: 01.06.1995
3 (8)
TLS.210.
1000
Red
I
F
– Forward Current ( mA )
100
t
p
/T=0.001
t
p
=10
m
s
I
v rel
– Relative Luminous Intensity
10
Red
TELEFUNKEN Semiconductors
1
10
0.1
1
0.1
0
96 11593
0.01
2
4
6
8
10
96 11596
1
10
I
F
– Forward Current ( mA )
100
V
F
– Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
1.6
I
v rel
– Relative Luminous Intensity
Figure 8. Relative Luminous Intensity vs. Forward Current
1.2
I
v rel
– Relative Luminous Intensity
Red
1.2
Red
1.0
0.8
0.6
0.4
0.2
0
600
0.8
0.4
0
0
96 11594
I
F
=10mA
20
40
60
80
100
96 11597
620
640
660
680
700
T
amb
– Ambient Temperature (
°C
)
l
– Wavelength ( nm )
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
2.4
I
v rel
– Relative Luminous Intensity
Red
Figure 9. Relative Luminous Intensity vs. Wavelength
1000
I
F
– Forward Current ( mA )
Yellow
100
t
p
/T=0.001
t
p
=10
m
s
2.0
1.6
1.2
0.8
0.4
I
FAV
=10mA, const.
0
10
20
0.5
50
0.2
100
0.1
200
0.05
500
0.02
I
F
(mA)
t
p
/T
10
1
0.1
0
95 10030
2
4
6
8
10
96 11595
1
V
F
– Forward Voltage ( V )
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 10. Forward Current vs. Forward Voltage
4 (8)
Rev. A1: 01.06.1995
TELEFUNKEN Semiconductors
TLS.210.
1.2
I
v rel
– Relative Luminous Intensity
Yellow
1.0
0.8
0.6
0.4
0.2
0
550
95 10039
1.6
I
v rel
– Relative Luminous Intensity
Yellow
1.2
0.8
0.4
0
0
95 10031
I
F
=10mA
20
40
60
80
100
T
amb
– Ambient Temperature (
°C
)
570
590
610
630
650
l
– Wavelength ( nm )
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
2.4
I
v rel
– Relative Luminous Intensity
Yellow
Figure 14. Relative Luminous Intensity vs. Wavelength
1000
I
F
– Forward Current ( mA )
Green
100
2.0
1.6
1.2
0.8
0.4
0
10
20
0.5
50
0.2
100
0.1
200
0.05
500
0.02
I
F
(mA)
t
p
/T
10
t
p
/T=0.001
t
p
=10
m
s
1
0.1
0
95 10034
2
4
6
8
10
95 10260
1
V
F
– Forward Voltage ( V )
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10
I
v rel
– Relative Luminous Intensity
Yellow
1
I
v rel
– Relative Luminous Intensity
Figure 15. Forward Current vs. Forward Voltage
1.6
Green
1.2
0.8
0.1
0.4
I
F
=10mA
0
20
40
60
80
100
0.01
1
95 10033
0
10
I
F
– Forward Current ( mA )
100
95 10035
T
amb
– Ambient Temperature (
°C
)
Figure 13. Relative Luminous Intensity vs. Forward Current
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
Rev. A1: 01.06.1995
5 (8)
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