I2P
AK
PSMN5R0-100ES
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
Rev. 3 — 26 September 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 100 °C; see
Figure 12;
see
Figure 13
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 13
Dynamic characteristics
Q
GD
Q
G(tot)
gate-drain charge
total gate charge
V
GS
= 10 V; I
D
= 75 A;
V
DS
= 50 V; see
Figure 14;
see
Figure 15
V
GS
= 10 V; T
j(init)
= 25 °C;
I
D
= 120 A; V
sup
≤
100 V;
R
GS
= 50
Ω;
Unclamped
-
-
49
170
-
-
nC
nC
[2]
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-55
-
Typ
-
-
-
-
7.7
Max Unit
100
120
338
175
9
V
A
W
°C
mΩ
Static characteristics
-
4.3
5
mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
-
-
537
mJ
NXP Semiconductors
PSMN5R0-100ES
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
[1]
[2]
Continuous current limited by package.
Measured 3 mm from package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
1 2 3
SOT226 (I2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
PSMN5R0-100ES
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
Type number
PSMN5R0-100ES
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
2 of 15
NXP Semiconductors
PSMN5R0-100ES
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
T
sld(M)
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 120 A;
V
sup
≤
100 V; R
GS
= 50
Ω;
Unclamped
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
j
≥
25 °C; T
j
≤
175 °C; R
GS
= 20 kΩ
V
GS
= 10 V; T
j
= 100 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
pulsed; t
p
≤
10 µs; T
mb
= 25 °C; see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
Max
100
100
20
110
120
622
338
175
175
260
120
622
537
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
Source-drain diode
Avalanche ruggedness
[1]
Continuous current limited by package
200
I
D
(A)
160
003aaf735
120
P
der
(%)
80
03aa16
120
(1)
80
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
PSMN5R0-100ES
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
3 of 15
NXP Semiconductors
PSMN5R0-100ES
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
10
4
I
D
(A)
10
3
Limit R
DSon
= V
DS
/ I
D
10
2
t
p
=10
μ
s
100
μ
s
003aaf734
10
1 ms
10 ms
100 ms
DC
1
10
10
2
10
3
1
10
-1
10
-1
V
DS
(V)
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN5R0-100ES
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
4 of 15
NXP Semiconductors
PSMN5R0-100ES
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions
see
Figure 4
Vertical in free air
Min
-
-
Typ
0.22
60
Max
0.44
-
Unit
K/W
K/W
1
Z
th(j-mb)
(K/W)
d = 0.5
10
-1
003aaf733
0.2
0.1
0.05
10
-2
0.02
single shot
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
T
t
P
=
t
p
T
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN5R0-100ES
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
5 of 15
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