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PSMN5R0-100PS_15

Description
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
File Size210KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

PSMN5R0-100PS_15 Overview

N-channel 100 V 5 mΩ standard level MOSFET in TO-220

TO
-22
0A
B
PSMN5R0-100PS
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
Rev. 3 — 26 September 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 100 °C; see
Figure 12;
see
Figure 13
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 13
Dynamic characteristics
Q
GD
Q
G(tot)
gate-drain charge
total gate charge
V
GS
= 10 V; I
D
= 75 A;
V
DS
= 50 V; see
Figure 14;
see
Figure 15
-
-
49
170
-
-
nC
nC
[2]
Conditions
T
j
25 °C; T
j
175 °C
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-55
-
Typ
-
-
-
-
7.7
Max Unit
100
120
338
175
9
V
A
W
°C
mΩ
Static characteristics
-
4.3
5
mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
V
GS
= 10 V; T
j(init)
= 25 °C;
drain-source avalanche I
D
= 120 A; V
sup
100 V;
energy
R
GS
= 50
Ω;
Unclamped
-
-
537
mJ
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