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Z2APK54MH

Description
Schottky Barrier Diode
File Size70KB,2 Pages
ManufacturerZOWIE Technology Corporation
Websitehttp://www.zowie.com.tw/
Download Datasheet View All

Z2APK54MH Overview

Schottky Barrier Diode

ZOWIE
Z2APK54MH
FEATURES
Halogen-free type
Lead free product, compliance to RoHS
Lead less chip form, no lead damage
Low power loss, High efficiency
High current capability, low VF
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
TM
* Patented ZPAK Package Technology
*
*
*
*
*
*
Schottky Barrier Diode
(40V / 5A)
OUTLINE DIMENSIONS
Case : Z2APAK
4.50 ± 0.1
2.20 ± 0.1
0.05
R0.05
Unit : mm
1.9
Typ.
0.95 ± 0.2
0.95 ± 0.2
0.95 ± 0.2
APPLICATION
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
Telecommunication
+ 0.2
1.20
- 0.1
2.75 ± 0.2
MARKING
MECHANICAL DATA
Case :
Packed with FRP substrate and epoxy underfilled
Terminals :
Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Z2A
54M
MOUNTING PAD LAYOUT
PACKING
*
3,000 pieces per 7" (178mm ± 2mm) reel
*
4 reels per box
*
6 boxes per carton
0.236(6.00)
REF.
0.079(2.00)
0.138(3.50)
0.059(1.50)
Unit : mm
Absolute Maximum Ratings (Ta = 25 C)
Rating
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Operating junction temperature Range
Storage temperature Range
o
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
STG
Conditions
Z2APK54MH
40
5
Unit
V
A
A
o
o
8.3ms single half sine-wave
110
-55 to +150
-55 to +150
C
C
Electrical characteristics (Ta = 25 C)
ITEM
Forward voltage (NOTE 1)
o
Symbol
V
F
I
F
= 5A
Conditions
Min.
-
Typ.
0.53
Max.
0.57
Unit
V
Repetitive peak reverse current
I
RRM
V
R
= Max. V
RRM
Ta = 25
o
C
Ta = 125
o
C
-
-
0.01
-
0.10
mA
15
Thermal resistance
R
th(JA)
R
th(JC)
Junction to ambient (NOTE 2)
Junction to case (NOTE 2)
-
-
122
10
-
-
o
C/W
C/W
o
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C.B. with 2.0 x 2.0mm copper pad areas.
REV. 0
2011/08
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