DCR3900H65
Phase Control Thyristor
DS6064-1 April 2011 (LN28304)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dV/dt*
dI/dt
6500 V
3900 A
71000 A
2000 V/µs
200 A/µs
APPLICATIONS
High Power Drives
High Voltage Power Supplies
Static Switches
*
Higher dV/dt selections available
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
DSM
and V
RSM
V
6500
6200
5800
5400
Conditions
DCR3900H65
DCR3900H62
DCR3900H58
DCR3900H54
T
vj
= -40°C to 110°C,
I
DRM
= I
RRM
= 700mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DRM
& V
RRM
=
V
DSM
& V
RSM
- 900V
respectively
Lower voltage grades available.
Outline type code: H
ORDERING INFORMATION
(See Package Details for further information)
When ordering, select the required part number
shown in the Voltage Ratings selection table.
Fig. 1 Package outline
For example:
DCR3900H65
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR3900H65
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 60°C unless stated otherwise
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Parameter
Test Conditions
Max.
Units
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
3900
6120
5510
A
A
A
SURGE RATINGS
Symbol
I
TSM
It
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
2
Test Conditions
10ms half sine, T
case
= 110°C
V
R
= 0
Max.
71.0
25.21
Units
kA
MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
F
m
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Test Conditions
Double side cooled
Double side cooled
Blocking V
DRM
/
VRRM
DC
DC
Min.
-
-
-40
-40
110
Max.
0.004
0.0008
110
140
130
Units
°C/W
°C/W
°C
°C
kN
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DCR3900H65
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 110°C
To 67% V
DRM
, T
j
= 110°C, gate open
From 67% V
DRM
to 4000A
Gate source 30V, 10,
t
r
< 0.5µs, T
j
= 110°C
Repetitive 50Hz
Non-repetitive
Min.
-
2000
-
-
Max.
700
-
200
1000
Units
mA
V/µs
A/µs
A/µs
V
T
V
T(TO)
r
T
t
gd
On-state voltage
Threshold voltage
On-state slope resistance
Delay time
I
T
= 3000A, T
case
= 110°C
T
case
= 110°C
T
case
= 110°C
V
D
= 67% V
DRM
, gate source 30V, 10
t
r
= 0.5µs, T
j
= 25°C
-
-
-
1.69
1.13
0.185
3.0
V
V
m
µs
t
q
Turn-off time
T
j
= 110°C, V
R
= 100V, dI/dt = 1.5A/µs,
dV
DR
/dt = 20V/µs linear to 67% V
DRM
-
1000
µs
Q
S
I
RR
I
L
I
H
Stored charge
Reverse recovery current
Latching current
Holding current
I
T
= 2000A, tp = 1000us,T
j
= 110°C,
dI/dt =1.5A/µs,
T
j
= 25°C,
T
j
= 25°C,
-
-
-
-
5750
95
1
200
µC
A
A
mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
V
GD
I
GT
I
GD
Parameter
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Gate non-trigger current
Test Conditions
V
DRM
= 5V, T
case
= 25°C
At 40% V
DRM,
T
case
= 110°C
V
DRM
= 5V, T
case
= 25°C
At 40% V
DRM,
T
case
= 110°C
Max.
2.6
TBD
400
TBD
Units
V
V
mA
mA
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DCR3900H65
SEMICONDUCTOR
CURVES
10000
9000
Instantaneous on-state current, I
T
- (A)
8000
7000
6000
5000
4000
3000
2000
1000
0
Tj=25°C
Tj=110°C
0.6
1.2
1.8
2.4
Instantaneous on-state voltage,V
T
- (V)
3
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
Where A = 0.371622
B = 0.107412
C = 0.000147685
D = 0.00021084
These values are valid for T
j
= 110°C
Fig.2 Maximum &minimum on-state characteristics
0.005
Double side cooled
t
R
thjc
t
½
R
thi
1
e
i
i
½
1
n
Thermal Impedance Zth(j-c) (°C/W)
0.004
0.003
i
1
2
3
4
0
0.001
0.01
0.1
Time ( s )
1
10
100
τ
i
(s)
0.9692
0.1332
0.0177
0.0042
R
thi
(°C/kW)
2.695
0.814
0.33
0.162
0.002
0.001
Fig.3 Maximum (limit) transient thermal impedance – junction to case (°C/W)
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DCR3900H65
SEMICONDUCTOR
20000
130
120
110
100
16000
Mean power dissipation - (W)
Maximum case temperature, T
case
- (°C)
90
80
12000
70
60
50
40
30
20
10
0
0
180
120
90
60
30
8000
4000
0
0
1000
2000
3000
Mean on-state current, I
T(AV)
- (A)
180
120
90
60
30
4000
1000
2000
3000
Mean on-state current, I
T(AV)
- (A)
4000
Fig.4 On-state power dissipation – sine wave
Fig.5 Maximum permissible case temperature,
double side cooled – sine wave
130
120
110
Maximum case temperature, Tcase - (°C)
20000
100
90
80
70
16000
Mean power dissipation - (W)
d.c.
180
120
90
60
30
12000
60
50
40
30
d.c.
180
120
90
60
30
8000
20
10
0
0
4000
0
1000
2000
3000
Mean on-state current, I
T(AV)
- (A)
4000
0
1000
2000
3000
Mean on-state current, I
T(AV)
- (A)
4000
Fig.6 Maximum permissible case temperature,
double side cooled – rectangular wave
Fig.7 On-state power dissipation – rectangular wave
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