GS8550CU/E7 datasheet, PDF - EEWORLD Datasheet

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GS8550CU/E7: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size28KB，3 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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GS8550CU/E7 Overview

Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN

GS8550CU/E7 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	incompatible
Maker	Vishay
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-W3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JEDEC-95 code	TO-226AA
JESD-30 code	O-PBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.625 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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GS8550xU

New Product

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistor (PNP)

TO-226AA (TO-92)

0.181 (4.6)

min. 0.492 (12.5) 0.181 (4.6)

0.142 (3.6)

Features

•

PNP Silicon Epitaxial Planar Transistors for amplifier

applications. Especially suitable for low power output

stages such as portable radios in class-B push-pull

operation.

• Complementary to GS8050xU

• The “x” in the part number can be B, C or D, depending

on the current gain.

Mechanical Data

Case:

TO-92 Plastic Package

Weight:

approx. 0.18g

Packaging Codes/Options:

E6/Bulk – 5K per container, 20K per box

E7/4K per Ammo mag., 20K per box

max.

∅

0.022 (0.55)

0.098 (2.5)

Bottom

View

Dimensions in inches and (millimeters)

Maximum Ratings & Thermal Characteristics

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation at T

amb

= 25°C

Thermal Resistance Junction to Ambient Air

Junction Temperature

Storage Temperature Range

Ratings at 25°C ambient temperature unless otherwise specified

Symbol

CBO

CEO

EBO

tot

θJA

Value

–40

–25

–6

–800

625

(1)

200

(1)

150

–55 to +150

Unit

°C/W

°C

Note:

(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case

Document Number 88194

10-May-02

www.vishay.com

GS8550CU/E7 Related Products

	GS8550CU/E7	GS8550BU/E6	RCWP1206100KFKS269	RCWP1206100KFKS3	GS8550CU/E6	GS8550BU/E7
Description	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN	RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 100 ppm, 100000 ohm, SURFACE MOUNT, 1206, CHIP	RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 100 ppm, 100000 ohm, SURFACE MOUNT, 1206, CHIP	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN
Is it lead-free?	Lead free	Lead free	Contains lead	Contains lead	Lead free	Lead free
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	SMT, 1206	SMT, 1206	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of terminals	3	3	2	2	3	3
Maximum operating temperature	150 °C	150 °C	155 °C	155 °C	150 °C	150 °C
Package form	CYLINDRICAL	CYLINDRICAL	SMT	SMT	CYLINDRICAL	CYLINDRICAL
surface mount	NO	NO	YES	YES	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier	Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Parts packaging code	TO-92	TO-92	-	-	TO-92	TO-92
Contacts	3	3	-	-	3	3
Maximum collector current (IC)	0.8 A	0.8 A	-	-	0.8 A	0.8 A
Collector-emitter maximum voltage	25 V	25 V	-	-	25 V	25 V
Configuration	SINGLE	SINGLE	-	-	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	85	-	-	120	85
JEDEC-95 code	TO-226AA	TO-226AA	-	-	TO-226AA	TO-226AA
JESD-30 code	O-PBCY-W3	O-PBCY-W3	-	-	O-PBCY-W3	O-PBCY-W3
Number of components	1	1	-	-	1	1
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	-	-	ROUND	ROUND
Polarity/channel type	PNP	PNP	-	-	PNP	PNP
Maximum power dissipation(Abs)	0.625 W	0.625 W	-	-	0.625 W	0.625 W
Certification status	Not Qualified	Not Qualified	-	-	Not Qualified	Not Qualified
Terminal form	WIRE	WIRE	-	-	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	-	-	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	-	-	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	-	-	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	-	-	100 MHz	100 MHz

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