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GS8550BU/E6

Description
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size28KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

GS8550BU/E6 Overview

Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN

GS8550BU/E6 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-W3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)85
JEDEC-95 codeTO-226AA
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
GS8550xU
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (PNP)
TO-226AA (TO-92)
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
Features
PNP Silicon Epitaxial Planar Transistors for amplifier
applications. Especially suitable for low power output
stages such as portable radios in class-B push-pull
operation.
• Complementary to GS8050xU
• The “x” in the part number can be B, C or D, depending
on the current gain.
Mechanical Data
Case:
TO-92 Plastic Package
Weight:
approx. 0.18g
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
max.
0.022 (0.55)
0.098 (2.5)
Bottom
View
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation at T
amb
= 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Ratings at 25°C ambient temperature unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
R
θJA
T
j
T
S
Value
–40
–25
–6
–800
625
(1)
200
(1)
150
–55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
Document Number 88194
10-May-02
www.vishay.com
1

GS8550BU/E6 Related Products

GS8550BU/E6 RCWP1206100KFKS269 RCWP1206100KFKS3 GS8550CU/E6 GS8550BU/E7 GS8550CU/E7
Description Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 100 ppm, 100000 ohm, SURFACE MOUNT, 1206, CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 100 ppm, 100000 ohm, SURFACE MOUNT, 1206, CHIP Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN
Is it lead-free? Lead free Contains lead Contains lead Lead free Lead free Lead free
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
package instruction CYLINDRICAL, O-PBCY-W3 SMT, 1206 SMT, 1206 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
JESD-609 code e0 e0 e0 e0 e0 e0
Number of terminals 3 2 2 3 3 3
Maximum operating temperature 150 °C 155 °C 155 °C 150 °C 150 °C 150 °C
Package form CYLINDRICAL SMT SMT CYLINDRICAL CYLINDRICAL CYLINDRICAL
surface mount NO YES YES NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Parts packaging code TO-92 - - TO-92 TO-92 TO-92
Contacts 3 - - 3 3 3
Maximum collector current (IC) 0.8 A - - 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 25 V - - 25 V 25 V 25 V
Configuration SINGLE - - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 85 - - 120 85 120
JEDEC-95 code TO-226AA - - TO-226AA TO-226AA TO-226AA
JESD-30 code O-PBCY-W3 - - O-PBCY-W3 O-PBCY-W3 O-PBCY-W3
Number of components 1 - - 1 1 1
Package body material PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND - - ROUND ROUND ROUND
Polarity/channel type PNP - - PNP PNP PNP
Maximum power dissipation(Abs) 0.625 W - - 0.625 W 0.625 W 0.625 W
Certification status Not Qualified - - Not Qualified Not Qualified Not Qualified
Terminal form WIRE - - WIRE WIRE WIRE
Terminal location BOTTOM - - BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER - - AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON - - SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz - - 100 MHz 100 MHz 100 MHz
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