2SA1011P-D datasheet, PDF - EEWORLD Datasheet

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2SA1011P-D: DescriptionPower Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN and PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size53KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SA1011P-D Overview

Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN and PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

2SA1011P-D Parametric

Parameter Name	Attribute value
Objectid	1670665817
Parts packaging code	TO-220AB
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	160 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN AND PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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Ordering number : EN8522

2SA1011P / 2SC2344P

SANYO Semiconductors

DATA SHEET

2SA1011P / 2SC2344P

Specifications

( ) : 2SA1011P

Absolute Maximum Ratings

at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

ICP

Tstg

Tc=25°C

PNP / NPN Epitaxial Planar Silicon Transistors

High-Voltage Switching, AF Power Amp,

100W Output Predriver Applications

Conditions

Ratings

-)180

-)160

-)6

(--)1.5

-)3

150

--55 to +150

Unit

°C

Electrical Characteristics

at Ta=25°C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Base-to-Emitter Voltage

Collector-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Symbol

ICBO

IEBO

hFE

Cob

VBE

VCE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

Conditions

VCB=(--)120V, IE=0A

VEB=(--)4V, IC=0A

VCE=(--)5V, IC=(-

-)300mA

VCE=(--)10V, IC=(--)50mA

VCB=(--)10V, f=1MHz

VCE=(--)5A, IC=(--)10mA

IC=(--)500mA, IB=(--)50mA

IC=(--)1mA, IE=0A

IC=(--)1mA, RBE=∞

IE=(--)1mA, IC=0A

(--)180

(--)160

(--)6

60*

100

(30)23

(--)1.5

-0.5)0.3

Ratings

min

typ

max

(--)10

200*

MHz

Unit

µA

Continued on next page.

: The 2SA1011P/2SC2344P are classified by 300mA hFE as follows :

Rank

hFE

60 to 120

100 to 200

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer' s products or

equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62707DA TI IM TC-00000697 No.8522-1/4

2SA1011P / 2SC2344P

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using

products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.

products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all

semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or

malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise

to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt

safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not

limited to protective circuits and error prevention circuits for safe design, redundant design, and structural

design.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are

controlled under any of applicable local export control laws and regulations, such products may require the

export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,

without the prior written consent of SANYO Semiconductor Co.,Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Upon using the technical information or products described herein, neither warranty nor license shall be granted

with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third

party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's

intellctual property rights which has resulted from the use of the technical information and products mentioned

above.

This catalog provides information as of June, 2007. Specifications and information herein are subject

to change without notice.

PS No.8522-4/4

2SA1011P-D Related Products

	2SA1011P-D	2SC2344P-E	2SC2344P-D	2SA1011P-E
Description	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN and PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN and PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN and PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN and PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Parts packaging code	TO-220AB	TO-220AB	TO-220AB	TO-220AB
package instruction	TO-220, 3 PIN	TO-220, 3 PIN	TO-220, 3 PIN	TO-220, 3 PIN
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknow	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1.5 A	1.5 A	1.5 A	1.5 A
Collector-emitter maximum voltage	160 V	160 V	160 V	160 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	60	100	60	100
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz
Objectid	1670665817	-	1670665826	1670665818

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