PDTD123T series
NPN 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 03 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistors (RET) family.
Table 1.
Product overview
Package
NXP
PDTD123TK
PDTD123TS
[1]
PDTD123TT
[1]
Type number
PNP complement
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
PDTB123TK
PDTB123TS
PDTB123TT
SOT346
SOT54
SOT23
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
Built-in bias resistors
Simplifies circuit design
500 mA output current capability
Reduces component count
Reduces pick and place costs
1.3 Applications
Digital application in automotive and
industrial segments
Controlling IC inputs
Cost saving alternative for BC817 series
in digital applications
Switching loads
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
Conditions
open base
Min
-
-
1.54
Typ
-
-
2.2
Max
50
500
2.86
Unit
V
mA
kΩ
NXP Semiconductors
PDTD123T series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2. Pinning information
Table 3.
Pin
SOT54
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab347
006aaa218
R1
Pinning
Description
Simplified outline
Symbol
2
1
3
SOT54A
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab348
006aaa218
R1
2
1
3
SOT54 variant
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab447
006aaa218
R1
2
1
3
SOT23, SOT346
1
2
3
input (base)
GND (emitter)
output (collector)
1
1
2
006aaa144
sym012
3
R1
3
2
PDTD123T_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 16 November 2009
2 of 10
NXP Semiconductors
PDTD123T series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
3. Ordering information
Table 4.
Ordering information
Package
Name
PDTD123TK
PDTD123TS
[1]
PDTD123TT
[1]
Type number
Description
plastic surface mounted package; 3 leads
plastic single-ended leaded (through hole) package;
3 leads
plastic surface mounted package; 3 leads
Version
SOT346
SOT54
SOT23
SC-59A
SC-43A
-
Also available in SOT54A and SOT54 variant packages (see
Section 2
and
Section 9).
4. Marking
Table 5.
Marking codes
Marking code
[1]
E9
TD123TS
*1T
Type number
PDTD123TK
PDTD123TS
PDTD123TT
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
P
tot
output current
total power dissipation
SOT346
SOT54
SOT23
T
stg
T
j
T
amb
[1]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
Max
50
50
5
+12
−5
500
250
500
250
+150
150
+150
Unit
V
V
V
V
V
mA
mW
mW
mW
°C
°C
°C
T
amb
≤
25
°C
[1]
-
-
-
−65
-
−65
storage temperature
junction temperature
ambient temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
© NXP B.V. 2009. All rights reserved.
PDTD123T_SER_3
Product data sheet
Rev. 03 — 16 November 2009
3 of 10
NXP Semiconductors
PDTD123T series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT346
SOT54
SOT23
[1]
Conditions
in free air
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
500
250
500
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1
C
c
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
Conditions
V
CB
= 40 V; I
E
= 0 A
V
CB
= 50 V; I
E
= 0 A
V
CE
= 50 V; I
B
= 0 A
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 50 mA
I
C
= 50 mA; I
B
= 2.5 mA
Min
-
-
-
-
100
-
1.54
-
Typ
-
-
-
-
300
-
2.2
7
Max
100
100
0.5
100
-
0.3
2.86
-
V
kΩ
pF
Unit
nA
nA
μA
nA
PDTD123T_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 16 November 2009
4 of 10
NXP Semiconductors
PDTD123T series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
10
3
006aaa447
10
−1
006aaa448
h
FE
(1)
(2)
V
CEsat
(V)
(3)
(1)
(2)
(3)
10
2
10
−1
1
10
10
2
I
C
(mA)
10
3
10
−2
10
−1
1
10
I
C
(mA)
10
2
V
CE
= 5 V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
I
C
/I
B
= 20
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
Fig 1.
DC current gain as a function of collector
current; typical values
Fig 2.
Collector-emitter saturation voltage as a
function of collector current; typical values
PDTD123T_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 16 November 2009
5 of 10
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