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SKIIP1813GB123-3DLV3

Description
Insulated Gate Bipolar Transistor, 1700A I(C), 1200V V(BR)CES
CategoryDiscrete semiconductor    The transistor   
File Size193KB,5 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
Download Datasheet Parametric View All

SKIIP1813GB123-3DLV3 Overview

Insulated Gate Bipolar Transistor, 1700A I(C), 1200V V(BR)CES

SKIIP1813GB123-3DLV3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)1700 A
Collector-emitter maximum voltage1200 V
Number of components1
Maximum operating temperature150 °C
VCEsat-Max2.1 V
Base Number Matches1
SKiiP 1813 GB123-3DL V3
Absolute Maximum Ratings
Symbol
System
V
CC1)
V
isol
I
t(RMS)
I
FSM
I²t
Operating DC link voltage
DC, t = 1 s, main terminals to heat sink
per AC terminal, T
terminal
<115°C
T
j
= 125 °C, t
p
= 10 ms, sin 180°
T
j
= 150 °C, t
p
= 10 ms, diode
fundamental output frequency
storage temperature
T
j
= 25 °C
T
j
= 150 °C
T
s
= 25 °C
T
s
= 70 °C
900
4300
400
10200
520
1
-40 ... 85
1200
1695
1306
1800
junction temperature
T
j
= 25 °C
T
j
= 150 °C
T
s
= 25 °C
T
s
= 70 °C
-40 ... 150
1200
1411
1068
1410
junction temperature
power supply
input signal voltage (high)
QPD <= 10pC, PRIM to POWER
secondary to primary side
switching frequency
-40 ... 150
13 ... 30
15 + 0.3
1170
75
10
V
V
A
A
kA²s
kHz
°C
V
A
A
A
°C
V
A
A
A
°C
V
V
V
kV/µs
kHz
T
s
= 25°C unless otherwise specified
Values
Unit
Conditions
SKiiP 3
2-pack-integrated intelligent
Power System
SKiiP 1813 GB123-3DL V3
Features
SKiiP technology inside
Trench IGBTs
CAL HD diode technology
Integrated current sensor
Integrated temperature sensor
Integrated heat sink
UL recognized File no. E63532
®
f
out
T
stg
IGBT
V
CES
I
C
I
Cnom
T
j
Diode
V
RRM
I
F
I
Fnom
T
j
Driver
V
s
V
iH
V
isolPD
dv/dt
f
sw
Typical Applications*
Renewable energies
Traction
Elevators
Industrial drives
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
E
on
+ E
off
R
th(j-s)
R
th(j-r)
at terminal
I
C
= 900 A
T
j
= 125 °C
per IGBT switch
per IGBT switch
I
C
= 900 A
at terminal
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
CC
= 600 V
V
CC
= 900 V
T
s
= 25°C unless otherwise specified
min.
typ.
1.7
1.9
0.90
0.80
0.9
1.2
331
585
0.02
0.018
1.10
1.00
1.1
1.5
Conditions
max.
2.1
Unit
V
V
V
V
m
m
mJ
mJ
K/W
K/W
Footnotes
1
With assembly of suitable MKP capacitor per
terminal
S33
© by SEMIKRON
Rev. 3 – 23.11.2012
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