SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
BDS19
•
•
•
High Voltage
Hermetic TO220 Isolated Metal Package
Ideally suited for Power Linear, Switching
and general Purpose Applications
Screening Options Available
•
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC
≤
75°C
Total Power Dissipation at
Derate Above 75°C
Junction Temperature Range
Storage Temperature Range
-150V
-150V
-5V
-8A
-2A
50W
0.4W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
2.5
Units
°C/W
** This datasheet supersedes document 3346
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8668
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
BDS19
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
V(BR)CEO
ICEO
ICBO
IEBO
hFE
(1)
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Forward-current transfer
ratio
Test Conditions
IC = -10mA
VCE = -75V
VCB = -150V
VEB = -5V
IC = -0.5A
IC = -4A
IC = -0.5A
IC = -4A
IC = -1.0A
IB = 0
IB = 0
IE = 0
IC = 0
VCE = -2V
VCE = -2V
IB = -0.05A
IB = -0.4A
VCE = -2V
Min.
-150
Typ
Max.
Units
V
-0.1
-20
-10
40
15
250
150
-0.4
-1.5
-1.4
mA
µA
VCE(sat)
VBE(on)
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Voltage
V
(1)
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = -0.5A
f = 5MHz
Turn-On Time
Storage Time
Fall Time
IC = -2A
IB1 = -0.2A
IC = -2A
VCC = -80V
VCC = -80V
0.5
µs
1.5
0.3
VCE = -4V
10
MHz
ton
ts
tf
IB1 = - IB2 = -0.2A
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8668
Issue 1
Page 2 of 3
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
BDS19
MECHANICAL DATA
Dimensions in mm (inches)
4.83 (0.190)
5.33 (0.210)
0.64 (0.025)
0.89 (0.035)
10.92 (0.430)
10.41 (0.410)
13.21 (0.52)
13.72 (0.54)
13.21 (0.52)
13.72 (0.54)
3.56 (0.140)
Dia
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
1
2
3
12.70 (0.500)
14.73 (0.750)
0.89 (0.035)
Dia.
1.27 (0.050)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
TO220M (TO-257AB)
Pin 1 - Base
Pin 2 - Collector
Pin 3 - Emitter
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8668
Issue 1
Page 3 of 3
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