TSD1760
Low Vce(sat) NPN Transistor
Pin assignment:
1. Base
2. Collector
3. Emitter
BV
CEO
= 30V
Ic = 3A
V
CE (SAT)
, = 0.25V(typ.) @Ic / Ib = 2A / 0.2A
Features
Low V
CE (SAT).
Excellent DC current gain characteristics
Ordering Information
Part No.
TSD1760CP
Packing
Tape & Reel
Package
TO-252
Structure
Epitaxial planar type.
Complementary to TSB1184
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 2mS
DC
Pulse
P
D
T
J
T
STG
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
40V
30V
5
3
7 (note 1)
1.0
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Characteristics
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Conditions
I
C
= 50uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50uA, I
C
= 0
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
/ I
B
= 2.0A / 0.2A
V
CE
= 2V, I
C
= 1A
V
CE
= 5V, I
C
= 100mA,
f = 100MHz
V
CB
= 10V, f=1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
Cob
Min
40
30
5
--
--
--
120
--
Typ
--
--
--
--
--
0.25
--
90
45
Max
--
--
--
1
1
0.5
560
--
--
Unit
V
V
V
uA
uA
V
MHz
pF
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Classification Of h
FE
Rank
Range
Q
120 - 270
R
180 - 390
S
270 - 560
TSD1760
1-1
2003/12 rev. A
京公网安备 11010802033920号
EEWORLD
