AON2406
20V N-Channel MOSFET
General Description
The AON2406 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
Product Summary
V
DS
I
D
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=2.5V)
R
DS(ON)
(at V
GS
=1.8V)
R
DS(ON)
(at V
GS
=1.5V)
20V
8A
< 12.5mΩ
< 15mΩ
< 19mΩ
< 24mΩ
DFN 2x2B
Top View
S
Bottom View
D
D
D
S
D
Pin 1
G
D
G
Pin 1
D
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
C
T
A
=25°
C
Power Dissipation
A
Maximum
20
±8
8
6
32
2.8
1.8
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
T
A
=70°
C
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Symbol
t
≤
10s
Steady-State
R
θJA
Typ
37
66
Max
45
80
Units
°
C/W
°
C/W
Rev 0 : March. 2012
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Page 1 of 5
AON2406
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=20V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS，
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=8A
T
J
=125°
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=2.5V, I
D
=6A
V
GS
=1.8V, I
D
=4A
V
GS
=1.5V, I
D
=1A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=8A
I
S
=1A,V
GS
=0V
0.4
32
10
13.5
11.5
14
17
50
0.6
1
4.5
1140
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
165
110
2.2
12.5
V
GS
=4.5V, V
DS
=10V, I
D
=8A
1.2
2.7
2.7
V
GS
=4.5V, V
DS
=10V, R
L
=1.25Ω,
R
GEN
=3Ω
I
F
=8A, dI/dt=100A/µs
1in
2
Min
20
Typ
Max
Units
V
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
1
5
±100
0.67
1.0
12.5
17
15
19
24
µA
nA
V
A
mΩ
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=8A, dI/dt=100A/µs
18
nC
nC
nC
ns
ns
ns
ns
ns
nC
3
37
7
11
3
A. The value of R
θJA
is measured with the device mounted on
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
t
≤
10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : March. 2012
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Page 2 of 5
AON2406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
4.5V
40
3.5V
2.5V
1.8V
12
125°C
30
I
D
(A)
I
D
(A)
9
15
V
DS
=5V
20
V
GS
=1.5V
6
25°C
10
3
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
20
Normalized On-Resistance
18
16
R
DS(ON)
(mΩ)
Ω
14
V
GS
=2.5V
12
10
8
6
0
9
12
15
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
3
6
V
GS
=4.5V
V
GS
=1.5V
V
GS
=1.8V
0
0
0.5
1
1.5
2
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
1.4
V
GS
=4.5V
I
D
=8A
1.2
1
V
GS
=2.5V
I
D
=6A
0.8
0
25
50
75
V
GS
=1.8V
I
D
=4A
17
5
V
GS
=1.5V
I
D
=1A
2
10
100
125
150
175
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
I
D
=8A
1.0E+02
1.0E+01
20
125°C
R
DS(ON)
(mΩ)
Ω
I
S
(A)
15
1.0E+00
1.0E-01
1.0E-02
1.0E-03
40
125°C
10
25°C
25°C
5
1.0E-04
1.0E-05
0
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0
Rev 0 : March. 2012
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Page 3 of 5
AON2406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=10V
I
D
=8A
4
Capacitance (pF)
1800
1600
1400
1200
1000
800
600
400
200
0
0
6
9
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
3
15
0
0
C
rss
10
15
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
20
C
oss
C
iss
V
GS
(Volts)
3
2
1
100.0
200
10.0
I
D
(Amps)
R
DS(ON)
limited
10µs
10µs
100µs
Power (W)
160
120
80
40
0
T
J(Max)
=150°C
T
A
=25°C
1ms
1.0
10ms
T
J(Max)
=150°C
T
A
=25°C
DC
0.1
17
5
2
10
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
0.0001
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.001
0.01
0.1
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
1
R
θJA
=80°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P
D
0.01
T
on
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
T
Rev 0 : March. 2012
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Embedded System
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