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AON6200

Description
30V N-Channel MOSFET
File Size308KB,6 Pages
ManufacturerAlpha & Omega Semiconductor
Websitehttp://www.aosmd.com/about
Download Datasheet View All

AON6200 Overview

30V N-Channel MOSFET

AON6200
30V N-Channel MOSFET
General Description
The AON6200 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Conduction and
switching losses are minimized due to an extremely low
combination of R
DS(ON)
and Crss.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
24A
< 7.8mΩ
< 11mΩ
100% UIS Tested
100% R
g
Tested
Top View
1
2
3
4
8
7
6
5
D
G
S
DFN5X6
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±20
24
18
130
13
10
28
39
35
14
1.95
1.25
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
C
T
C
=100°
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
25
55
2.6
Max
30
64
3.5
Units
°
C/W
°
C/W
°
C/W
Rev 2: Feb 2011
www.aosmd.com
Page 1 of 6
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