Naina Semiconductor Ltd.
Features
•
•
•
•
Guard Ring Protection
Low forward voltage drop
High surge current capability
Up to 100V V
RRM
MBR20045CT thru
MBR200100CTR
Silicon Schottky Diode, 200A
TWIN TOWER PACKAGE
Maximum Ratings
(T
J
= 25
o
C unless otherwise specified)
Parameter
Repetitive peak
reverse voltage
RMS reverse voltage
DC blocking voltage
Average forward
current
Non-repetitive
forward surge
current, half sine-
wave
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
T
C
≤ 135
o
C
T
C
= 25
o
C
t
p
= 8.3 ms
Conditions
MBR20045CT
(R)
45
32
45
200
MBR20060CT MBR20080CT
(R)
(R)
60
42
60
200
80
56
80
200
MBR200100C
T(R)
100
70
100
200
Units
V
V
V
A
I
FSM
1500
1500
1500
1500
A
Electrical Characteristics
(T
J
= 25
o
C unless otherwise specified)
Parameter
DC forward voltage
Symbol
V
F
Conditions
I
F
= 100 A
T
J
= 25
o
C
V
R
= 20 V
T
J
= 25
o
C
V
R
= 20 V
T
J
= 125
o
C
MBR20045CT
(R)
0.68
5
200
MBR20060CT
(R)
0.76
5
200
MBR20080CT
(R)
0.88
5
200
MBR200100C
T(R)
0.88
5
mA
200
Units
V
DC reverse current
I
R
Thermal Characteristics
(T
J
= 25
o
C unless otherwise specified)
Parameter
Thermal resistance
junction to case
Operating, storage
temperature range
Symbol
R
thJ-C
T
J
,
T
stg
MBR20045CT
(R)
0.5
- 40 to +175
MBR20060CT
(R)
0.5
- 40 to +175
MBR20080CT
(R)
0.5
- 40 to +175
MBR200100C
T(R)
0.5
- 40 to +175
Units
o
C/W
o
C
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
Naina Semiconductor Ltd.
Package Outline
MBR20045CT thru
MBR200100CTR
ALL DIMENSIONS IN MM
Ordering Table
MBR
1
200
2
20
3
CT
4
1 – Device Type
>
MBR = Schottky Barrier Diode Module
2 – Current Rating = I
F(AV)
3 – Voltage = V
RRM
4 – Polarity
>
CT = Normal (Cathode to Base)
>
CTR = Reverse (Anode to Base)
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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