d. Maximum under Steady State conditions is 120 °C/W.
Symbol
R
thJA
R
thJF
Typ.
54
33
Max.
64
42
P-Channel
Typ.
49
30
Max.
62.5
40
Unit
°C/W
1
www.din-tek.jp
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
I
D
= 250 µA
II
D
= - 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
DS
= - 5 V, V
GS
= - 10 V
V
GS
= 10 V, I
D
= 5 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 10 V, I
D
= - 5 A
V
GS
= 4.5 V, I
D
= 4 A
V
GS
= - 4.5 V, I
D
= - 4 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
P-Channel
V
DS
= - 20 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 5 A
Total Gate Charge
Q
g
V
DS
= - 20 V, V
GS
= - 10 V, I
D
= - 5 A
N-Channel
V
DS
= 20 V, V
GS
= 4.5 V I
D
= 5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
P-Channel
V
DS
= - 20 V, V
GS
= - 4.5 V, I
D
= - 5 A
f = 1 MHz
N-Ch
N-Channel
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.5
1.0
640
970
73
120
41
95
11.7
25
5.3
11.8
1.9
3.0
1.7
5.2
2.2
5.5
4.5
11
Ω
20
38
9
18
nC
pF
g
fs
V
DS
= 15 V, I
D
= 5 A
V
DS
= - 15 V, I
D
= - 5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
10
- 10
0.0195
0.037
0.0255
0.040
22
14
0.024
0.048
0.036
0.058
S
Ω
1.4
- 1.2
30
- 30
44
- 42
- 5.5
4.6
3.0
- 2.5
100
- 100
1
-1
10
- 10
A
µA
V
nA
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
DTM4606
2
www.din-tek.jp
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
N-Channel
I
F
= 2 A, dI/dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 2 A, dI/dt = - 100 A/µs, T
J
= 25 °C
I
S
= 1.6 A
I
S
= - 1.6 A
T
C
= 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.78
- 0.76
19
26
14
18.5
13
12.5
6
13.5
ns
2.5
- 2.5
20
- 20
1.2
- 1.2
30
50
25
35
V
ns
nC
A
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
N-Ch
N-Channel
V
DD
= 20 V, R
L
= 4
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
P-Channel
V
DD
= - 20 V, R
L
= 4
Ω
I
D
≅
- 5 A, V
GEN
= - 10 V, R
g
= 1
Ω
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 20 V, R
L
= 4
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
P-Channel
V
DD
= - 20 V, R
L
= 4
Ω
I
D
≅
- 5 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
7
7
10
12
15
30
9
9
16
44
17
33
16
28
10
13
14
14
20
24
30
60
18
18
30
80
30
50
30
60
20
25
ns
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
DTM4606
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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