1812SMS--82NJL datasheet, PDF - EEWORLD Datasheet

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1812SMS--82NJL: DescriptionRF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs; File Size1MB，18 Pages; ManufacturerFREESCALE (NXP)

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RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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Freescale Semiconductor

Technical Data

Document Number: MRF6V2150N

Rev. 4, 4/2010

RF Power Field-

-Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed primarily for CW large--signal output and driver applications with

frequencies up to 450 MHz. Devices are unmatched and are suitable for use in

industrial, medical and scientific applications.

•

Typical CW Performance at 220 MHz: V

= 50 Volts, I

= 450 mA,

out

= 150 Watts

Power Gain — 25 dB

Drain Efficiency — 68.3%

•

Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

•

Qualified Up to a Maximum of 50 V

Operation

•

Integrated ESD Protection

•

225°C Capable Plastic Package

•

RoHS Compliant

•

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF6V2150NR1

MRF6V2150NBR1

10-

-450 MHz, 150 W, 50 V

LATERAL N-

-CHANNEL

SINGLE-

-ENDED

BROADBAND

RF POWER MOSFETs

CASE 1486-

-03, STYLE 1

TO-

-270 WB-

-4

PLASTIC

MRF6V2150NR1

CASE 1484-

-04, STYLE 1

TO-

-272 WB-

-4

PLASTIC

MRF6V2150NBR1

PARTS ARE SINGLE-

-ENDED

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Symbol

DSS

stg

Value

-- 0.5, +110

-- 0.5, + 12

-- 65 to +150

150

225

Unit

Vdc

°C

(Top View)

Symbol

θJC

Value

(2,3)

0.24

Unit

°C/W

Note: Exposed backside of the package is

the source terminal for the transistor.

out

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 80°C, 150 W CW

Figure 1. Pin Connections

Table 3. ESD Protection Characteristics

Test Methodology

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Class

2 (Minimum)

A (Minimum)

IV (Minimum)

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF6V2150NR1 MRF6V2150NBR1

RF Device Data

Freescale Semiconductor

1812SMS--82NJL Related Products

	1812SMS--82NJL	ATC100B300JT500XT	ATC200B393KT50XT	B06TJL	CRCW12062700FKEA	CRCW12064R75FKEA	ESME630ELL471MK25S	MRF6V2150N_10	ATC100B330JT500XT	ATC200B203KT50XT
Description	RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs	RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs	RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs	RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs	RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs	RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs	RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs	RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs	RF Power Field Effect Transistor	RF Power Field Effect Transistor

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