Freescale Semiconductor
Technical Data
Document Number: MRF6P27160H
Rev. 2, 12/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 2600 to
2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
•
Typical Single- Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1800 mA, P
out
= 35 Watts Avg., f = 2660 MHz, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.6 dB
Drain Efficiency — 22.6%
ACPR @ 885 kHz Offset — - 47.8 dBc in 30 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 160 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P27160HR6
2600- 2700 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 160 W CW
Case Temperature 71°C, 35 W CW
Symbol
R
θJC
Value
(2,3)
0.29
0.31
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
MRF6P27160HR6
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
III (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 250
μAdc)
Gate Quiescent Voltage
(3)
(V
DD
= 28 Vdc, I
D
= 1800 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2.8
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
—
2
2.8
0.21
3
4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1800 mA, P
out
= 35 W Avg. N - CDMA, f = 2660 MHz,
Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±885
kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
G
ps
η
D
ACPR
IRL
13
20
—
—
14.6
22.6
- 47.8
- 13
16
—
- 45
-9
dB
%
dBc
dB
MRF6P27160HR6
2
RF Device Data
Freescale Semiconductor
B1
V
BIAS
+
C7
+
C6
C5
C4
R1
C3
Z35
Z37
+
C15
C16
C17
C18
+
C19
Z31
C13
RF
OUTPUT
Z32 Z33
DUT
V
SUPPLY
Z17 Z19 Z21 Z23 Z25 Z27 Z29
Z3
RF
INPUT Z1
Z2
C2
C1
Z5
Z7
Z9
Z11
Z13
Z15
Z4
Z6
Z8
Z10
Z12
Z14
Z16 Z18 Z20 Z22 Z24 Z26 Z28
C14
B2
V
BIAS
+
+
C10 C9
C8
C20
C21
C22
R2
C12 C11
Z34
Z36
+
C23
+
C24
Z30
V
SUPPLY
Z1
Z2, Z30
Z3, Z31
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
1.011″ x 0.139″ Microstrip
0.150″ x 0.070″ Microstrip
1.500″ x 0.086″ Microstrip
0.050″ x 0.230″ Microstrip
0.170″ x 0.080″ Microstrip
0.144″ x 0.340″ Microstrip
0.400″ x 0.210″ Microstrip
0.280″ x 0.710″ Microstrip
0.461″ x 0.490″ Microstrip
0.357″ x 0.766″ Microstrip
0.284″ x 0.415″ Microstrip
Z20, Z21
Z22, Z23
Z24, Z25
Z26, Z27
Z28, Z29
Z32
Z33
Z34, Z35
Z36, Z37
PCB
0.160″ x 0.760″ Microstrip
0.240″ x 0.150″ Microstrip
0.170″ x 0.420″ Microstrip
0.260″ x 0.080″ Microstrip
0.040″ x 0.258″ Microstrip
0.622″ x 0.139″ Microstrip
0.346″ x 0.081″ Microstrip
0.801″ x 0.050″ Microstrip
0.460″ x 0.095″ Microstrip
Arlon GX - 0300- 5022, 0.030″,
ε
r
= 2.5
Figure 1. MRF6P27160HR6 Test Circuit Schematic
Table 5. MRF6P27160HR6 Test Circuit Component Designations and Values
Part
B1, B2
C1, C2
C3, C8, C15, C20
C4, C9
C5, C10
C6, C11
C7, C12
C13, C14
C16, C17, C21, C22
C18, C23
C19, C24
R1, R2
Description
Beads, Surface Mount
5.6 pF Chip Capacitors
3.3 pF Chip Capacitors
0.01
μF
Chip Capacitors
2.2
μF,
50 V Chip Capacitors
22
μF,
25 V Tantalum Chip Capacitors
47
μF,
16 V Tantalum Chip Capacitors
4.3 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
47
μF,
50 V Electrolytic Capacitors
330
μF,
63 V Electrolytic Capacitors
3.3
W,
1/3 W Chip Resistors
Part Number
2743019447
ATC100B5R6CT500XT
ATC100B3R3CT500XT
C1825C103J1RAC
C1825C225J5RAC
T491D226K025AT
T491D476K016AT
ATC100B4R3CT500XT
GRM55DR61H106KA88B
EMVY500ADA470MF80G
EMVY630GTR331MMH0S
CRCW121003R3FKEA
Manufacturer
Fair- Rite
ATC
ATC
Kemet
Kemet
Kemet
Kemet
ATC
Murata
Chemi- Con
Chemi- Con
Vishay
MRF6P27160HR6
RF Device Data
Freescale Semiconductor
3
C17
C7 C6
B1
R1
C3
C5* C4*
C15
C16
C18
+
-
C19
C1
C13
CUT OUT AREA
C2
C14
MRF6P27160H
Rev 5
C20
C21
C24
C10*
C8
B2
C12 C11
R2
C22
C23
*Stacked
Figure 2. MRF6P27160HR6 Test Circuit Component Layout
MRF6P27160HR6
4
RF Device Data
Freescale Semiconductor
+
-
C9*
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT1 (dBc)
−10
−11
−12
−13
−14
−15
η
D
, DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT1 (dBc)
−10
−11
−12
−13
−14
−15
−16
IRL, INPUT RETURN LOSS (dB)
2700 mA
I
DQ
= 900 mA
−40
IRL, INPUT RETURN LOSS (dB)
16
15.8
15.6
G
ps
, POWER GAIN (dB)
15.4
15.2 V
DD
= 28 Vdc, P
out
= 35 W (Avg.),
15 I
DQ
= 1800 mA, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
14.8
14.6
14.4
14.2
G
ps
IRL
η
D
24
23
22
21
20
−40
−45
ACPR
ALT1
−50
−55
−60
−65
14
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P
out
= 35 Watts Avg.
15.2
15.1
15
G
ps
, POWER GAIN (dB)
14.9
14.8
14.7
14.6
14.5
14.4
14.3
14.2
ACPR
ALT1
G
ps
η
D
V
DD
= 28 Vdc, P
out
= 70 W (Avg.),
I
DQ
= 1800 mA, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
35
34
33
32
31
30
−30
−35
−40
−45
−50
IRL
−55
14.1
−60
14
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P
out
= 70 Watts Avg.
17
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 2700 mA
16
G
ps
, POWER GAIN (dB)
2250 mA
1800 mA
15
1350 mA
14
−20
V
DD
= 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−30
−50
1800 mA
−60
0.1
1
1350 mA
10
2250 mA
13
12
0.1
900 mA
V
DD
= 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
1
10
100
400
100
300
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6P27160HR6
RF Device Data
Freescale Semiconductor
5
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