HUM2001 – HUM2020
TM
®
PIN DIODE
High Power Stud
RoHS Compliant Versions Available
DESCRIPTION
With high isolation, low loss, and low distortion characteristics, this
Microsemi Power PIN diode is perfect for the high power switching
applications where size and power handling capability are critical.
Its advantages also include the low forward bias resistance and high
zero bias impedance that are essential for low loss, high isolation and
wide bandwidth performance.
Hermetically sealed, SOGO passivated PIN chips with full-faced
metallurgical bonds on both sides are utilized to achieve high
reliability and high surge capability.
KEY FEATURES
High Power Stud Mount
Package.
High Zero Bias Impedance
Very Low Inductance and
Capacitance.
No Internal Lead Straps.
Small Mechanical Outline.
RoHS compliant packaging
Available
1
www.MICROSEMI.com
IMPORTANT:
For the most current data, consult our website:
www.MICROSEMI.com
HU
U
VOLTAGE RATINGS
@ 25C (unless otherwise specified)
Part Number
Reverse Voltage @ 10uA (V)
HUM2001
100
HUM2005
500
HUM2010
1000
HUM2015
1500
HUM2020
2000
APPLICATIONS/BENEFITS
MRI Applications.
High Power Antenna Switching.
HUM2001 – HUM2020
The HUM2000 series of products can be
supplied with a RoHS compliant finish.
Order HUMX2001 – HUMX2020.
Consult factory for details.
1
Copyright
2006
Rev: 2009-02-05
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
HUM2001 – HUM2020
TM
®
PIN DIODE
High Power Stud
RoHS Compliant Versions Available
www.MICROSEMI.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
3B
Parameter
Average Power Dissipation
Non-Repetitive Sinusoidal Surge Current (8.3 ms)
Storage Temperature Range
Operating Temperature Range
Thermal resistance Junction-to Case
“C” Stud Only
Symbol
P
D
I
T
STG
T
OP
R
θJC
Limits
100
13
-65 – 175
- 55 – 150
7.5
Units
W
A
°C
°C
°C/W
ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
Parameter
Symbol
Conditions
Total Capacitance
C
T
V
R
= 100V, F = 1 MHz
Series Resistance
Carrier Lifetime
Reverse Current
Parallel Resistance
Forward Voltage
R
S
T
L
I
R
R
P
V
F
I
F
= 500 mA, F = 4 MHz
I
F
= 10 mA/100 V
V
R
= Voltage rating
f = 10MHz, I
F
= 100V
I
F
= 500mA
MIN.
TYPICAL
3.4
0.1
23
MAX.
4.0
0.2
10
Units
pF
Ohms
μs
μA
kOhms
V
10
50
60
0.85
1.0
ELECTRICALS
ELECTRICALS
Copyright
2006
Rev: 2009-02-05
Microsemi
Microwave Products
Page 2
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
HUM2001 – HUM2020
TM
®
PIN DIODE
High Power Stud
RoHS Compliant Versions Available
TYPICAL RS VS IF
TYPICAL CT VS VR
www.MICROSEMI.com
IF CURVE
RP VS VOLTAGE
GRAPHS
Copyright
2006
Rev: 2009-02-05
Microsemi
Microwave Products
Page 3
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
HUM2001 – HUM2020
TM
®
PIN DIODE
High Power Stud
RoHS Compliant Versions Available
PACKAGE STYLE ‘B’
PACKAGE STYLE ‘C’
www.MICROSEMI.com
PACKAGE STYLE ‘D’
PACKAGE STYLE ‘SM’
Ordering Information:
Add style letter to suffix for the desired package. IE: HUM2020D
MECHANICAL
Copyright
2006
Rev: 2009-02-05
Microsemi
Microwave Products
Page 4
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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