AOT7S60/AOB7S60/AOTF7S60
600V 7A
α
MOS
TM
Power Transistor
General Description
The AOT7S60 & AOB7S60 & AOTF7S60 have been
fabricated using the advanced
αMOS
TM
high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low R
DS(on)
, Q
g
and E
OSS
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Product Summary
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
700V
33A
0.6Ω
8.2nC
1.9µJ
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT7S60L & AOB7S60L & AOTF7S60L
Top View
TO-220
TO-220F
TO-263
D
2
PAK
D
D
D S
G
AOT7S60
AOTF7S60
G
D
S
G
AOB7S60
G
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
AOT7S60/AOB7S60
Symbol
Drain-Source Voltage
V
DS
600
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOTF7S60L
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
P
D
dv/dt
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
104
0.8
7
5
±30
7*
5*
33
1.7
43
86
34
0.3
100
20
-55 to 150
300
AOT7S60/AOB7S60
65
0.5
1.2
AOTF7S60L
65
--
5
A
A
mJ
mJ
W
W/
o
C
V/ns
°
C
°
C
Units
°
C/W
°
C/W
°
C/W
Repetitive avalanche energy
Single pulsed avalanche energy
C
T
C
=25°
B
Power Dissipation
Derate above 25
o
C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
H
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
A
Maximum Case-to-sink
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
Rev0: Aug 2011
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Page 1 of 6
AOT7S60/AOB7S60/AOTF7S60
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
STATIC PARAMETERS
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
C
Parameter
Conditions
C
I
D
=250µA, V
GS
=0V, T
J
=25°
C
I
D
=250µA, V
GS
=0V, T
J
=150°
V
DS
=600V, V
GS
=0V
V
DS
=480V, T
J
=150°
C
V
DS
=0V, V
GS
=±30V
V
DS
=5V, I
D
=250µA
V
GS
=10V, I
D
=3.5A, T
J
=25°
C
V
GS
=10V, I
D
=3.5A, T
J
=150°
C
I
S
=3.5A,V
GS
=0V, T
J
=25°
C
Min
600
650
-
-
-
2.7
-
-
-
-
-
-
-
-
Typ
-
700
-
10
-
3.3
0.54
1.48
0.82
-
-
372
28
22
65
1.2
17.5
8.2
2.0
2.8
19
13
50
15
198
18
2.4
Max
-
-
1
-
±100
3.9
0.60
1.64
-
7
33
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
V
µA
nΑ
V
Ω
Ω
V
A
A
pF
pF
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
A
µC
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
o(er)
C
o(tr)
C
rss
R
g
Output Capacitance
Effective output capacitance, energy
related
H
Effective output capacitance, time
related
I
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=100V, f=1MHz
V
GS
=0V, V
DS
=0 to 480V, f=1MHz
-
V
GS
=0V, V
DS
=100V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
-
-
-
V
GS
=10V, V
DS
=480V, I
D
=3.5A
-
-
-
V
GS
=10V, V
DS
=400V, I
D
=3.5A,
R
G
=25Ω
I
F
=3.5A,dI/dt=100A/µs,V
DS
=400V
I
F
=3.5A,dI/dt=100A/µs,V
DS
=400V
-
-
-
-
-
-
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
I
rm
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
Body Diode Reverse Recovery Charge I
F
=3.5A,dI/dt=100A/µs,V
DS
=400V
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°
C.
B. The power dissipation P
D
is based on T
J(MAX)
=150° using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
C,
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150° Ratings are based on low frequency and duty cycles to keep initial T
J
C,
=25°
C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150° The SOA curve provides a single pulse ratin g.
C.
G. L=60mH, I
AS
=1.7A, V
DD
=150V, Starting T
J
=25°
C
H. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
I. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Aug 2011
www.aosmd.com
Page 2 of 6
AOT7S60/AOB7S60/AOTF7S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
14
12
10
I
D
(A)
8
5.5V
6
4
2
0
0
5
10
15
20
V
DS
(Volts)
Figure 1: On-Region Characteristics@25°C
5V
2
V
GS
=4.5V
0
0
5
10
15
20
V
DS
(Volts)
Figure 2: On-Region Characteristics@125°C
V
GS
=4.5V
10V
6V
I
D
(A)
12
6V
10
10V
8
5.5V
6
5V
4
100
V
DS
=20V
10
125°C
R
DS(ON)
(
Ω
)
-55°C
1.5
1.2
0.9
V
GS
=10V
0.6
0.3
0.0
2
4
6
8
10
0
3
6
9
12
15
I
D
(A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
1.2
I
D
(A)
1
25°C
0.1
0.01
V
GS
(Volts)
Figure 3: Transfer Characteristics
3
Normalized On-Resistance
2.5
2
1.5
1
0.5
0
-100
BV
DSS
(Normalized)
V
GS
=10V
I
D
=3.5A
1.1
1
0.9
-50
0
50
100
150
200
0.8
-100
-50
0
o
50
100
150
200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
T
J
( C)
Figure 6: Break Down vs. Junction Temperature
Rev0: Aug 2011
www.aosmd.com
Page 3 of 6
AOT7S60/AOB7S60/AOTF7S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02
1.0E+01
1.0E+00
I
S
(A)
V
GS
(Volts)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 7: Body-Diode Characteristics (Note E)
0.2
0
0
6
8
10
Q
g
(nC)
Figure 8: Gate-Charge Characteristics
2
4
12
25°C
9
125°C
15
12
V
DS
=480V
I
D
=3.5A
6
3
10000
5
1000
Capacitance (pF)
C
iss
Eoss(uJ)
4
100
C
oss
10
C
rss
1
3
E
oss
2
1
0
0
200
300
400
500
V
DS
(Volts)
Figure 9: Capacitance Characteristics
100
600
0
0
100
200
300
400
V
DS
(Volts)
Figure 10: Coss stroed Energy
500
600
100
100
10µs
100µs
1
1ms
DC
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
10
100
1000
1
10
100
1000
V
DS
(Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)7S60 (Note F)
V
DS
(Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF7S60L(Note F)
10ms
0.1s
1s
10
I
D
(Amps)
100µs
1
DC
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1ms
10ms
Rev0: Aug 2011
www.aosmd.com
I
D
(Amps)
R
DS(ON)
limited
10µs
10
R
DS(ON)
limited
Page 4 of 6
AOT7S60/AOB7S60/AOTF7S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
8
80
Current rating I
D
(A)
25
75
100
125
T
CASE
(°C)
Figure 13: Avalanche energy
50
150
175
6
E
AS
(mJ)
60
4
40
20
2
0
0
0
75
100
125
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
25
50
150
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=1.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOT(B)7S60 (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF7S60L (Note F)
Rev0: Aug 2011
www.aosmd.com
Page 5 of 6
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