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AOTF7S60

Description
600V 7A a MOS Power Transistor
File Size285KB,6 Pages
ManufacturerAlpha & Omega Semiconductor
Websitehttp://www.aosmd.com/about
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AOTF7S60 Overview

600V 7A a MOS Power Transistor

AOT7S60/AOB7S60/AOTF7S60
600V 7A
α
MOS
TM
Power Transistor
General Description
The AOT7S60 & AOB7S60 & AOTF7S60 have been
fabricated using the advanced
αMOS
TM
high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low R
DS(on)
, Q
g
and E
OSS
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Product Summary
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
700V
33A
0.6Ω
8.2nC
1.9µJ
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT7S60L & AOB7S60L & AOTF7S60L
Top View
TO-220
TO-220F
TO-263
D
2
PAK
D
D
D S
G
AOT7S60
AOTF7S60
G
D
S
G
AOB7S60
G
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
AOT7S60/AOB7S60
Symbol
Drain-Source Voltage
V
DS
600
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOTF7S60L
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
P
D
dv/dt
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
104
0.8
7
5
±30
7*
5*
33
1.7
43
86
34
0.3
100
20
-55 to 150
300
AOT7S60/AOB7S60
65
0.5
1.2
AOTF7S60L
65
--
5
A
A
mJ
mJ
W
W/
o
C
V/ns
°
C
°
C
Units
°
C/W
°
C/W
°
C/W
Repetitive avalanche energy
Single pulsed avalanche energy
C
T
C
=25°
B
Power Dissipation
Derate above 25
o
C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
H
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
A
Maximum Case-to-sink
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
Rev0: Aug 2011
www.aosmd.com
Page 1 of 6

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