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Datasheet> All Categories > Discrete semiconductor> The transistor> BS250
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BS250

Description
Small Signal Field-Effect Transistor, 0.18A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92-18RM, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size112KB，4 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
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BS250 Overview

Small Signal Field-Effect Transistor, 0.18A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92-18RM, 3 PIN

BS250 Parametric

Parameter NameAttribute value
MakerTEMIC
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage45 V
Maximum drain current (ID)0.18 A
Maximum drain-source on-resistance14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON

BS250 Preview

TP0610L/T, VP0610L/T, BS250
P-Channel Enhancement-Mode MOSFET Transistors
TP0610L
TP0610T
Product Summary
Part Number
TP0610L
TP0610T
VP0610L
VP0610T
BS250
VP0610L
VP0610T
BS250
V
(BR)DSS
Min (V)
–60
–60
–60
–60
–45
r
DS(on)
Max (W)
10 @ V
GS
= –10 V
10 @ V
GS
= –10 V
10 @ V
GS
= –10 V
10 @ V
GS
= –10 V
14 @ V
GS
= –10 V
V
GS(th)
(V)
–1 to –2.4
–1 to –2.4
–1 to –3.5
–1 to
-3.5
–1 to –3.5
I
D
(A)
–0.18
–0.12
–0.18
–0.12
–0.18
Features
D
D
D
D
D
High-Side Switching
Low On-Resistance: 8
W
Low Threshold: –1.9 V
Fast Switching Speed: 16 ns
Low Input Capacitance: 15 pF
TO-226AA
(TO-92)
S
G
D
1
Benefits
D
D
D
D
D
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
TO-92-18RM
(TO-18 Lead Form)
D
G
S
1
Applications
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Power Supply, Converter Circuits
D
Motor Control
TO-236
(SOT-23)
G
S
1
3
D
2
2
2
3
Top View
TP0610L
VP0610L
3
Top View
BS250
Top View
TP0610T (T0)*
VP0610T (V0)*
*Marking Code for TO-236
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction & Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70209.
Applications information may also be obtained via FaxBack, request document #70611.
T
A
=
25_C
T
A
=
100_C
T
A
=
25_C
T
A
=
100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
TP0610L
–60
"30
–0.18
–0.11
–0.8
0.8
0.32
156
TP0610T
–60
"30
–0.12
–0.07
–0.4
0.36
0.14
350
VP0610L
–60
"30
–0.18
–0.11
–0.8
0.8
0.32
156
–55 to 150
VP0610T
–60
"30
–0.12
–0.07
–0.4
0.36
0.14
350
BS250
–45
"25
–0.18
Unit
V
A
0.83
150
W
_C/W
_C
Siliconix
S-52426—Rev. E, 14-Apr-97
1
TP0610L/T, VP0610L/T, BS250
Specifications
a
Limits
TP0610L/T
VP0610L/T
BS250
Parameter
Static
Drain-Source
Breakdown V lt
B kd
Voltage
Gate-Threshold Voltage
Symbol
Test Conditions
Typ
b
Min Max Min
Max
Min
Max
Unit
V
(BR)DSS
V
GS(th)
V
GS
= 0 V, I
D
= –10
mA
V
GS
= 0 V, I
D
= –100
mA
V
DS
= V
GS
, I
D
= –1 mA
V
DS
= 0 V, V
GS
=
"20
V
T
J
=
125_C
V
DS
= 0 V, V
GS
=
"15
V
V
DS
= –48 V, V
GS
= 0 V
–70
–60
–60
–45
V
–3.5
–1.9
–1
–2.4
"10
"50
–1
–3.5
"10
–1
Gate-Body Leakage
I
GSS
nA
"20
–1
–200
–1
–200
–0.5
mA
Zero Gate Voltage
Drain Current
I
DSS
T
J
=
125_C
V
DS
= –25 V, V
GS
= 0 V
V
DS
= –10 V, V
GS
= –4.5 V
–180
–750
–50
On-State Drain Current
c
I
D(on)
V
DS
= –10 V
V
GS
= –10 V
10
V
GS
= –4.5 V, I
D
= –25 mA
L
T
–600
–220
mA
11
L
8
15
6.5
125
90
–1.1
80
60
25
10
20
10
80
70
mS
V
10
20
10
14
W
Drain-Source
On-Resistance
c
r
DS(on)
V
GS
= –10 V
I
D
= –0.5 A
05
V
GS
= –10 V
I
D
= –0.2 A
T
J
=
125_C
T
L
T
V
DS
= –10 V, I
D
= –0.5 A
Forward Transconductance
c
Diode Forward Voltage
g
fs
V
SD
V
DS
= –10 V
I
D
= –0.1 A
I
S
= –0.5 A, V
GS
= 0 V
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
C
iss
C
oss
C
rss
V
DS
= –25 V, V
GS
= 0 V
f = 1 MHz
15
10
3
60
25
5
60
25
5
pF
Switching
d
t
ON
Turn-On Time
t
d(on)
t
r
t
OFF
Turn-Off Time
t
d(off)
t
f
Notes
a. T
A
= 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW
v300
ms
duty cycle
v2%.
d. Switching time is essentially independent of operating temperature.
V
DD
= –25 V, R
L
= 133
W
I
D
^
–0.18 A, V
GEN
= –10 V
R
G
= 25
W
8
6
10
8
7
8
15
20
15
20
VPDS06
10
15
10
15
10
ns
10
2
Siliconix
S-52426—Rev. E, 14-Apr-97
TP0610L/T, VP0610L/T, BS250
Typical Characteristics (25_C Unless Otherwise Noted)
Ohmic Region Characteristics
–500
V
GS
= –10 V
I
D
– Drain Current (mA)
–400
–8 V
–7 V
I
D
– Drain Current (mA)
–8
–10
Output Characteristics for Low Gate Drive
V
GS
= –3.0, –2.8 V
–2.6 V
–300
–6 V
–6
–2.4 V
–200
–5 V
–4
–2.2 V
–2
–2.0 V
–1.8 V
0
–100
–4 V
–3 V
0
0
–1
–2
–3
–4
–5
V
DS
– Drain-to-Source Voltage (V)
–100
0
–0.4
–0.8
–1.2
–1.6
–2.0
V
DS
– Drain-to-Source Voltage (V)
20.0
17.5
Transfer Characteristics
V
DS
= –15 V
T
C
= –55_C
125_C
r
DS(on)
– On-Resistance (
W
)
On-Resistance vs. Gate-to-Source Voltage
I
D
= –25 mA
–0.2 A
–80
I
D
– Drain Current (mA)
25_C
15.0
–0.5 A
12.5
10.0
7.5
5.0
T
J
= 25_C
–60
–40
–20
0
0
–1
–2
–3
–4
–5
V
GS
– Gate-Source Voltage (V)
2.5
0
–4
–8
–12
–16
–20
V
GS
– Gate-Source Voltage (V)
25
r
DS(on)
– Drain-Source On-Resistance (
W
)
On-Resistance vs. Drain Current
r
DS(on)
– Drain-Source On-Resistance
(Normalized)
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
Normalized On-Resistance
vs. Junction Temperature
V
GS
= –10 V
I
D
= –0.5 A
20
15
V
GS
= –10 V
10
5
0
0
–0.15
–0.30
–0.45
–0.60
–0.75
I
D
– Drain Current (A)
–50
–10
30
70
110
150
T
J
– Junction Temperature (_C)
Siliconix
S-52426—Rev. E, 14-Apr-97
3
TP0610L/T, VP0610L/T, BS250
Typical Characteristics (25_C Unless Otherwise Noted) (Cont’d)
–1
Threshold Region
50
Capacitance
V
GS
= 0 V
f = 1 MHz
I
D
– Drain Current (mA)
–0.1
100_C
50_C
C – Capacitance (pF)
T
J
= 150_C
40
30
20
C
iss
10
C
oss
–0.01
0_C
–55_C
–0.001
0
–0.3
–0.6
–0.9
–1.2
–1.5
–1.8
–2.1
V
GS
– Gate-to-Source Voltage (V)
0
0
C
rss
–10
–20
–30
–40
–50
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
–15.0
V
GS
– Gate-to-Source Voltage (V)
–12.5
–10.0
V
DS
= –30 V
–7.5
–5.0
–2.5
0
0
100
200
300
400
500
600
Q
g
– Total Gate Charge (pC)
1
–10
–48 V
I
D
= –0.5 A
t – Switching Time (ns)
100
Load Condition Effects on Switching
V
DD
= –25 V
R
G
= 25
W
V
GS
= 0 to –10 V
t
f
t
d(off)
10
t
r
t
d(on)
–100
I
D
– Drain Current (A)
–1 k
1
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1 0.05
0.02
0.01
Single Pulse
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
0.01
0.1
1
10
100
1K
10 K
t
1
– Square Wave Pulse Duration (sec)
4
Siliconix
S-52426—Rev. E, 14-Apr-97
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

BS250 Related Products

BS250 VP0610L VP0610T TP0610L
Description Small Signal Field-Effect Transistor, 0.18A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92-18RM, 3 PIN Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-92, 3 PIN
Maker TEMIC TEMIC TEMIC TEMIC
Reach Compliance Code unknown unknown unknown unknown
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 45 V 60 V 60 V 60 V
Maximum drain current (ID) 0.18 A 0.18 A 0.12 A 0.18 A
Maximum drain-source on-resistance 14 Ω 10 Ω 10 Ω 10 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code O-PBCY-W3 O-PBCY-W3 R-PDSO-G3 O-PBCY-W3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND RECTANGULAR ROUND
Package form CYLINDRICAL CYLINDRICAL SMALL OUTLINE CYLINDRICAL
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO YES NO
Terminal form WIRE WIRE GULL WING WIRE
Terminal location BOTTOM BOTTOM DUAL BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
package instruction CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 - CYLINDRICAL, O-PBCY-W3
Maximum feedback capacitance (Crss) - 5 pF 5 pF 5 pF
JEDEC-95 code - TO-226AA TO-236 TO-226AA

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